Part Number: PDTA114TK,135 vs PDTA114YU,115

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Part Number: PDTA114TK,135 PDTA114YU,115
Manufacturer: NXP USA Inc. Nexperia USA Inc.
Description: TRANS PREBIAS PNP 250MW SMT3 TRANS PREBIAS PNP 200MW SOT323
Quantity Available: Available Available
Datasheets: - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2007 2004
Part Status Obsolete Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Base Part Number PDTA114 PDTA114
Power - Max 250mW -
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA 5V 100 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA 1μA
Vce Saturation (Max) @ Ib, Ic 150mV @ 500μA, 10mA 100mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V -
Current - Collector (Ic) (Max) 100mA -
Resistor - Base (R1) 10 k Ω 10 k Ω
RoHS Status ROHS3 Compliant ROHS3 Compliant
Factory Lead Time - 4 Weeks
Mount - Surface Mount
Number of Pins - 70
JESD-609 Code - e3
Number of Terminations - 3
ECCN Code - EAR99
Terminal Finish - Tin (Sn)
Max Operating Temperature - 150°C
Min Operating Temperature - -65°C
Additional Feature - BUILT-IN BIAS RESISTOR RATIO IS 4.7
Max Power Dissipation - 200mW
Terminal Position - DUAL
Terminal Form - GULL WING
Peak Reflow Temperature (Cel) - 260
Time@Peak Reflow Temperature-Max (s) - 40
Pin Count - 3
JESD-30 Code - R-PDSO-G3
Max Output Current - 100mA
Number of Elements - 1
Polarity - PNP
Element Configuration - Single
Power Dissipation - 200mW
Transistor Application - SWITCHING
Collector Emitter Voltage (VCEO) - 50V
Max Collector Current - 100mA
Collector Emitter Breakdown Voltage - 50V
Max Breakdown Voltage - 50V
Emitter Base Voltage (VEBO) - -10V
hFE Min - 100
Resistor - Emitter Base (R2) - 47 k Ω
Radiation Hardening - No
Lead Free - Lead Free
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