Part Number: IRG4PC30UDPBF vs IRG4BC15UD
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Part Number: | IRG4PC30UDPBF | IRG4BC15UD |
Manufacturer: | Infineon Technologies | Infineon Technologies |
Description: | IGBT 600V 23A 100W TO247AC | IGBT 600V 14A 49W TO220AB |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 14 Weeks | - |
Mount | Through Hole | - |
Mounting Type | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-220-3 |
Number of Pins | 3 | - |
Transistor Element Material | SILICON | SILICON |
Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
Packaging | Tube | Tube |
Published | 2000 | 2001 |
Part Status | Last Time Buy | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Number of Terminations | 3 | 3 |
Termination | Through Hole | - |
ECCN Code | EAR99 | - |
Additional Feature | ULTRA FAST SOFT RECOVERY | ULTRA FAST SOFT RECOVERY |
Subcategory | Insulated Gate BIP Transistors | - |
Voltage - Rated DC | 600V | - |
Max Power Dissipation | 100W | - |
Current Rating | 23A | - |
Number of Elements | 1 | 1 |
Element Configuration | Single | - |
Power Dissipation | 100W | - |
Case Connection | COLLECTOR | COLLECTOR |
Input Type | Standard | Standard |
Turn On Delay Time | 40 ns | - |
Transistor Application | POWER CONTROL | POWER CONTROL |
Rise Time | 21ns | - |
Polarity/Channel Type | N-CHANNEL | N-CHANNEL |
Turn-Off Delay Time | 91 ns | - |
Collector Emitter Voltage (VCEO) | 2.1V | - |
Max Collector Current | 23A | - |
Reverse Recovery Time | 42 ns | 28ns |
JEDEC-95 Code | TO-247AC | TO-220AB |
Collector Emitter Breakdown Voltage | 600V | - |
Collector Emitter Saturation Voltage | 2.1V | - |
Turn On Time | 62 ns | 37 ns |
Test Condition | 480V, 12A, 23 Ω, 15V | 480V, 7.8A, 75 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A | 2.4V @ 15V, 7.8A |
Turn Off Time-Nom (toff) | 300 ns | 400 ns |
Gate Charge | 50nC | 23nC |
Current - Collector Pulsed (Icm) | 92A | 42A |
Td (on/off) @ 25°C | 40ns/91ns | 17ns/160ns |
Switching Energy | 380μJ (on), 160μJ (off) | 240μJ (on), 260μJ (off) |
Gate-Emitter Voltage-Max | 20V | - |
Gate-Emitter Thr Voltage-Max | 6V | - |
Height | 20.3mm | - |
Length | 15.875mm | - |
Width | 5.3mm | - |
REACH SVHC | No SVHC | - |
Radiation Hardening | No | - |
RoHS Status | ROHS3 Compliant | Non-RoHS Compliant |
Lead Free | Lead Free | - |
Surface Mount | - | NO |
Terminal Position | - | SINGLE |
Peak Reflow Temperature (Cel) | - | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | - | NOT SPECIFIED |
JESD-30 Code | - | R-PSFM-T3 |
Qualification Status | - | Not Qualified |
Configuration | - | SINGLE WITH BUILT-IN DIODE |
Power - Max | - | 49W |
Voltage - Collector Emitter Breakdown (Max) | - | 600V |
Current - Collector (Ic) (Max) | - | 14A |
Submit RFQ: | Submit | Submit |