Part Number: SIRA04DP-T1-GE3 vs SIRA24DP-T1-GE3
Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! | ||
---|---|---|
Part Number: | SIRA04DP-T1-GE3 | SIRA24DP-T1-GE3 |
Manufacturer: | Vishay Siliconix | Vishay Siliconix |
Description: | MOSFET N-CH 30V 40A PPAK SO-8 | MOSFET N-CH 25V 60A SO8 |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 14 Weeks | 14 Weeks |
Contact Plating | Tin | - |
Mount | Surface Mount | - |
Mounting Type | Surface Mount | Surface Mount |
Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 |
Number of Pins | 8 | - |
Weight | 506.605978mg | - |
Transistor Element Material | SILICON | - |
Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
Series | TrenchFET® | TrenchFET® Gen IV |
Published | 2011 | - |
Part Status | Active | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
Number of Terminations | 5 | - |
ECCN Code | EAR99 | EAR99 |
Resistance | 2.15mOhm | - |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Terminal Position | DUAL | - |
Terminal Form | C BEND | - |
JESD-30 Code | R-PDSO-C5 | - |
Number of Elements | 1 | - |
Number of Channels | 1 | 1 |
Power Dissipation-Max | 5W Ta 62.5W Tc | 62.5W Tc |
Element Configuration | Single | - |
Operating Mode | ENHANCEMENT MODE | - |
Power Dissipation | 5W | 5W |
Case Connection | DRAIN | - |
Turn On Delay Time | 24 ns | 12 ns |
FET Type | N-Channel | N-Channel |
Transistor Application | SWITCHING | - |
Rds On (Max) @ Id, Vgs | 2.15m Ω @ 15A, 10V | 1.4m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA | 2.1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3595pF @ 15V | 2650pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 40A Tc | 60A Tc |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V | 26nC @ 4.5V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 4.5V 10V |
Vgs (Max) | 20V, -16V | 20V, -16V |
Fall Time (Typ) | 16 ns | - |
Turn-Off Delay Time | 30 ns | 18 ns |
Continuous Drain Current (ID) | 40A | 44.5A |
Threshold Voltage | 1.1V | - |
Gate to Source Voltage (Vgs) | 20V | - |
Drain to Source Breakdown Voltage | 30V | 25V |
Avalanche Energy Rating (Eas) | 20 mJ | - |
Nominal Vgs | 1.1 V | - |
Height | 1.12mm | 1.17mm |
Length | 6.25mm | - |
Width | 5.26mm | - |
REACH SVHC | Unknown | - |
Radiation Hardening | No | - |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Lead Free | Lead Free | - |
Manufacturer Package Identifier | - | S17-0173-Single |
Peak Reflow Temperature (Cel) | - | NOT SPECIFIED |
Reach Compliance Code | - | unknown |
Time@Peak Reflow Temperature-Max (s) | - | NOT SPECIFIED |
Max Junction Temperature (Tj) | - | 150°C |
Submit RFQ: | Submit | Submit |