Part Number: SIRA04DP-T1-GE3 vs SIRA12DP-T1-GE3
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | SIRA04DP-T1-GE3 | SIRA12DP-T1-GE3 |
| Manufacturer: | Vishay Siliconix | Vishay Siliconix |
| Description: | MOSFET N-CH 30V 40A PPAK SO-8 | MOSFET N-CH 30V 25A PPAK SO-8 |
| Quantity Available: | Available | Available |
| Datasheets: | - | SIRA12DP |
| Factory Lead Time | 14 Weeks | 14 Weeks |
| Contact Plating | Tin | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Number of Pins | 8 | 8 |
| Weight | 506.605978mg | 506.605978mg |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | TrenchFET® | TrenchFET® |
| Published | 2011 | 2001 |
| Part Status | Active | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 5 | 5 |
| ECCN Code | EAR99 | EAR99 |
| Resistance | 2.15mOhm | 4.3mOhm |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | DUAL | DUAL |
| Terminal Form | C BEND | C BEND |
| JESD-30 Code | R-PDSO-C5 | R-PDSO-C5 |
| Number of Elements | 1 | 1 |
| Number of Channels | 1 | 1 |
| Power Dissipation-Max | 5W Ta 62.5W Tc | 4.5W Ta 31W Tc |
| Element Configuration | Single | Single |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Power Dissipation | 5W | 4.5W |
| Case Connection | DRAIN | DRAIN |
| Turn On Delay Time | 24 ns | 20 ns |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.15m Ω @ 15A, 10V | 4.3m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3595pF @ 15V | 2070pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 40A Tc | 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V | 45nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V | 4.5V 10V |
| Vgs (Max) | 20V, -16V | 20V, -16V |
| Fall Time (Typ) | 16 ns | 20 ns |
| Turn-Off Delay Time | 30 ns | 25 ns |
| Continuous Drain Current (ID) | 40A | 25A |
| Threshold Voltage | 1.1V | 1.1V |
| Gate to Source Voltage (Vgs) | 20V | 20V |
| Drain to Source Breakdown Voltage | 30V | 30V |
| Avalanche Energy Rating (Eas) | 20 mJ | - |
| Nominal Vgs | 1.1 V | - |
| Height | 1.12mm | 1.12mm |
| Length | 6.25mm | 6.25mm |
| Width | 5.26mm | 5.26mm |
| REACH SVHC | Unknown | Unknown |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Subcategory | - | FET General Purpose Power |
| Submit RFQ: | Submit | Submit |
