Part Number: IRF3710ZPBF vs IRF3704ZSTRRPBF

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Part Number: IRF3710ZPBF IRF3704ZSTRRPBF
Manufacturer: Infineon Technologies Infineon Technologies
Description: MOSFET N-CH 100V 59A TO-220AB MOSFET N-CH 20V 67A D2PAK
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 12 Weeks -
Mount Through Hole -
Mounting Type Through Hole Surface Mount
Package / Case TO-220-3 TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins 3 -
Transistor Element Material SILICON -
Operating Temperature -55°C~175°C TJ -55°C~175°C TJ
Packaging Tube Tape & Reel (TR)
Series HEXFET® HEXFET®
Published 2003 2004
JESD-609 Code e3 -
Part Status Active Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 -
Termination Through Hole -
ECCN Code EAR99 -
Resistance 18MOhm -
Terminal Finish MATTE TIN OVER NICKEL -
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE -
Subcategory FET General Purpose Power -
Voltage - Rated DC 100V -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 250 -
Current Rating 59A -
Time@Peak Reflow Temperature-Max (s) 30 -
Lead Pitch 2.54mm -
Number of Elements 1 -
Number of Channels 1 -
Power Dissipation-Max 160W Tc 57W Tc
Element Configuration Single -
Operating Mode ENHANCEMENT MODE -
Power Dissipation 160W -
Case Connection DRAIN -
Turn On Delay Time 17 ns -
FET Type N-Channel N-Channel
Transistor Application SWITCHING -
Rds On (Max) @ Id, Vgs 18m Ω @ 35A, 10V 7.9mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA 2.55V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V 1220pF @ 10V
Current - Continuous Drain (Id) @ 25°C 59A Tc 67A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V 13nC @ 4.5V
Rise Time 77ns -
Drive Voltage (Max Rds On,Min Rds On) 10V 4.5V 10V
Vgs (Max) ±20V ±20V
Fall Time (Typ) 56 ns -
Turn-Off Delay Time 41 ns -
Reverse Recovery Time 50 ns -
Continuous Drain Current (ID) 59A -
Threshold Voltage 4V -
JEDEC-95 Code TO-220AB -
Gate to Source Voltage (Vgs) 20V -
Drain to Source Breakdown Voltage 100V -
Pulsed Drain Current-Max (IDM) 240A -
Dual Supply Voltage 100V -
Avalanche Energy Rating (Eas) 200 mJ -
Recovery Time 75 ns -
Max Junction Temperature (Tj) 175°C -
Nominal Vgs 4 V -
Height 19.8mm -
Length 10.54mm -
Width 4.69mm -
REACH SVHC No SVHC -
Radiation Hardening No -
RoHS Status ROHS3 Compliant -
Lead Free Lead Free -
Supplier Device Package - D2PAK
Drain to Source Voltage (Vdss) - 20V
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