| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
IRF3710ZPBF |
IRF3704STRLPBF |
| Manufacturer: |
Infineon Technologies |
Infineon Technologies |
| Description: |
MOSFET N-CH 100V 59A TO-220AB |
MOSFET N-CH 20V 77A D2PAK |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
IRF3704(S,L)PbF
|
| Factory Lead Time |
12 Weeks |
- |
| Mount |
Through Hole |
Surface Mount |
| Mounting Type |
Through Hole |
Surface Mount |
| Package / Case |
TO-220-3 |
TO-263-3, D2Pak (2 Leads Tab), TO-263AB |
| Number of Pins |
3 |
3 |
| Transistor Element Material |
SILICON |
- |
| Operating Temperature |
-55°C~175°C TJ |
-55°C~175°C TJ |
| Packaging |
Tube |
Tape & Reel (TR) |
| Series |
HEXFET® |
HEXFET® |
| Published |
2003 |
2004 |
| JESD-609 Code |
e3 |
- |
| Part Status |
Active |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
3 |
- |
| Termination |
Through Hole |
- |
| ECCN Code |
EAR99 |
- |
| Resistance |
18MOhm |
- |
| Terminal Finish |
MATTE TIN OVER NICKEL |
- |
| Additional Feature |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
- |
| Subcategory |
FET General Purpose Power |
- |
| Voltage - Rated DC |
100V |
20V |
| Technology |
MOSFET (Metal Oxide) |
MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) |
250 |
- |
| Current Rating |
59A |
77A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
- |
| Lead Pitch |
2.54mm |
- |
| Number of Elements |
1 |
1 |
| Number of Channels |
1 |
- |
| Power Dissipation-Max |
160W Tc |
87W Tc |
| Element Configuration |
Single |
- |
| Operating Mode |
ENHANCEMENT MODE |
- |
| Power Dissipation |
160W |
90W |
| Case Connection |
DRAIN |
- |
| Turn On Delay Time |
17 ns |
- |
| FET Type |
N-Channel |
N-Channel |
| Transistor Application |
SWITCHING |
- |
| Rds On (Max) @ Id, Vgs |
18m Ω @ 35A, 10V |
9mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250μA |
3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
2900pF @ 25V |
1996pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C |
59A Tc |
77A Tc |
| Gate Charge (Qg) (Max) @ Vgs |
120nC @ 10V |
19nC @ 4.5V |
| Rise Time |
77ns |
98ns |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
4.5V 10V |
| Vgs (Max) |
±20V |
±20V |
| Fall Time (Typ) |
56 ns |
- |
| Turn-Off Delay Time |
41 ns |
- |
| Reverse Recovery Time |
50 ns |
- |
| Continuous Drain Current (ID) |
59A |
77A |
| Threshold Voltage |
4V |
- |
| JEDEC-95 Code |
TO-220AB |
- |
| Gate to Source Voltage (Vgs) |
20V |
20V |
| Drain to Source Breakdown Voltage |
100V |
20V |
| Pulsed Drain Current-Max (IDM) |
240A |
- |
| Dual Supply Voltage |
100V |
- |
| Avalanche Energy Rating (Eas) |
200 mJ |
- |
| Recovery Time |
75 ns |
- |
| Max Junction Temperature (Tj) |
175°C |
- |
| Nominal Vgs |
4 V |
- |
| Height |
19.8mm |
- |
| Length |
10.54mm |
- |
| Width |
4.69mm |
- |
| REACH SVHC |
No SVHC |
- |
| Radiation Hardening |
No |
- |
| RoHS Status |
ROHS3 Compliant |
RoHS Compliant |
| Lead Free |
Lead Free |
Lead Free |
| Supplier Device Package |
- |
D2PAK |
| Max Operating Temperature |
- |
175°C |
| Min Operating Temperature |
- |
-55°C |
| Drain to Source Voltage (Vdss) |
- |
20V |
| Input Capacitance |
- |
1.996nF |
| Drain to Source Resistance |
- |
13.5mOhm |
| Rds On Max |
- |
9 mΩ |
| Submit RFQ: |
Submit |
Submit |
