Part Number: NVD5117PLT4G-VF01 vs NVD5863NLT4G-VF01

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Part Number: NVD5117PLT4G-VF01 NVD5863NLT4G-VF01
Manufacturer: ON Semiconductor ON Semiconductor
Description: MOSFET P-CH 60V 61A DPAK MOSFET N-CH 60V 14.9A DPAK
Quantity Available: Available Available
Datasheets: - -
Lifecycle Status ACTIVE (Last Updated: 4 days ago) ACTIVE, NOT REC (Last Updated: 4 days ago)
Factory Lead Time 7 Weeks 10 Weeks
Mounting Type Surface Mount -
Package / Case TO-252-3, DPak (2 Leads Tab), SC-63 -
Surface Mount YES -
Transistor Element Material SILICON -
Operating Temperature -55°C~175°C TJ -
Packaging Tape & Reel (TR) -
JESD-609 Code e3 -
Pbfree Code yes yes
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) -
Number of Terminations 2 -
Terminal Finish Tin (Sn) -
Technology MOSFET (Metal Oxide) -
Terminal Position SINGLE -
Terminal Form GULL WING -
Peak Reflow Temperature (Cel) NOT SPECIFIED -
Reach Compliance Code not_compliant -
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED -
Reference Standard AEC-Q101 -
JESD-30 Code R-PSSO-G2 -
Number of Elements 1 -
Configuration SINGLE WITH BUILT-IN DIODE -
Power Dissipation-Max 4.1W Ta 118W Tc -
Operating Mode ENHANCEMENT MODE -
Case Connection DRAIN -
FET Type P-Channel -
Rds On (Max) @ Id, Vgs 16m Ω @ 29A, 10V -
Vgs(th) (Max) @ Id 2.5V @ 250μA -
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V -
Current - Continuous Drain (Id) @ 25°C 11A Ta 61A Tc -
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V -
Drain to Source Voltage (Vdss) 60V -
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V -
Vgs (Max) ±20V -
Drain Current-Max (Abs) (ID) 11A -
Drain-source On Resistance-Max 0.022Ohm -
Pulsed Drain Current-Max (IDM) 419A -
DS Breakdown Voltage-Min 60V -
Avalanche Energy Rating (Eas) 240 mJ -
RoHS Status ROHS3 Compliant RoHS Compliant
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