Part Number: SI7898DP-T1-E3 vs SI7882DP-T1-E3
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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| Part Number: | SI7898DP-T1-E3 | SI7882DP-T1-E3 |
| Manufacturer: | Vishay Siliconix | Vishay Siliconix |
| Description: | MOSFET N-CH 150V 3A PPAK SO-8 | MOSFET N-CH 12V 13A PPAK SO-8 |
| Quantity Available: | Available | Available |
| Datasheets: | - | - |
| Factory Lead Time | 14 Weeks | - |
| Contact Plating | Tin | - |
| Mount | Surface Mount | Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Number of Pins | 8 | 8 |
| Weight | 506.605978mg | 506.605978mg |
| Transistor Element Material | SILICON | SILICON |
| Operating Temperature | -55°C~150°C TJ | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | TrenchFET® | TrenchFET® |
| Published | 2016 | 2009 |
| JESD-609 Code | e3 | e3 |
| Pbfree Code | yes | yes |
| Part Status | Active | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| Number of Terminations | 5 | 5 |
| ECCN Code | EAR99 | EAR99 |
| Resistance | 85mOhm | 5.5mOhm |
| Subcategory | FET General Purpose Power | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Terminal Position | DUAL | DUAL |
| Terminal Form | C BEND | C BEND |
| Peak Reflow Temperature (Cel) | 260 | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 | 40 |
| Pin Count | 8 | 8 |
| JESD-30 Code | R-XDSO-C5 | R-PDSO-C5 |
| Number of Elements | 1 | 1 |
| Number of Channels | 1 | 1 |
| Power Dissipation-Max | 1.9W Ta | 1.9W Ta |
| Element Configuration | Single | Single |
| Operating Mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Power Dissipation | 1.9W | 5W |
| Case Connection | DRAIN | DRAIN |
| Turn On Delay Time | 9 ns | 28 ns |
| FET Type | N-Channel | N-Channel |
| Transistor Application | SWITCHING | SWITCHING |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 3.5A, 10V | 5.5m Ω @ 17A, 4.5V |
| Vgs(th) (Max) @ Id | 4V @ 250μA | 1.4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta | 13A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V | 30nC @ 4.5V |
| Rise Time | 10ns | 32ns |
| Drain to Source Voltage (Vdss) | 150V | - |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V | 2.5V 4.5V |
| Vgs (Max) | ±20V | ±8V |
| Fall Time (Typ) | 10 ns | 32 ns |
| Turn-Off Delay Time | 24 ns | 82 ns |
| Continuous Drain Current (ID) | 3A | 13A |
| Threshold Voltage | 2V | 1.4V |
| Gate to Source Voltage (Vgs) | 20V | 8V |
| Drain Current-Max (Abs) (ID) | 3A | - |
| Pulsed Drain Current-Max (IDM) | 25A | 50A |
| Max Junction Temperature (Tj) | 150°C | - |
| Nominal Vgs | 4 V | 1.4 V |
| Height | 1.12mm | 1.04mm |
| Length | 4.9mm | 4.9mm |
| Width | 5.89mm | 5.89mm |
| REACH SVHC | Unknown | No SVHC |
| Radiation Hardening | No | No |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Lead Free | Lead Free | Lead Free |
| Termination | - | SMD/SMT |
| Terminal Finish | - | Matte Tin (Sn) |
| Additional Feature | - | FAST SWITCHING |
| Dual Supply Voltage | - | 12V |
| Avalanche Energy Rating (Eas) | - | 7.2 mJ |
| Submit RFQ: | Submit | Submit |
| Image | Part Number | Manufacturer | Description | Compare |
|---|---|---|---|---|
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SI7882DP | SI | Compare | |
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SI7882DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 13A PPAK SO-8 | Compare |
