Part Number: MRF6V12250HR3 vs MRF6S19140HR3
| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |  |
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|---|---|---|
| Part Number: | MRF6V12250HR3 | MRF6S19140HR3 |
| Manufacturer: | NXP USA Inc. | NXP USA Inc. |
| Description: | FET RF 100V 1.03GHZ NI-780 | FET RF 68V 1.99GHZ NI-880 |
| Quantity Available: | Available | Available |
| Datasheets: | - | MRF6S19140H |
| Package / Case | SOT-957A | NI-880 |
| Surface Mount | YES | - |
| Transistor Element Material | SILICON | - |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Published | 2010 | 2007 |
| Part Status | Discontinued | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | 3 (168 Hours) |
| Number of Terminations | 2 | - |
| ECCN Code | EAR99 | EAR99 |
| Voltage - Rated | 100V | 68V |
| HTS Code | 8541.29.00.75 | - |
| Terminal Position | DUAL | - |
| Terminal Form | FLAT | - |
| Frequency | 1.03GHz | 1.93GHz~1.99GHz |
| Base Part Number | MRF6V12250 | MRF6S19140 |
| JESD-30 Code | R-CDFM-F2 | - |
| Number of Elements | 1 | - |
| Configuration | SINGLE | - |
| Operating Mode | ENHANCEMENT MODE | - |
| Case Connection | SOURCE | - |
| Current - Test | 100mA | 1.15A |
| Polarity/Channel Type | N-CHANNEL | - |
| Transistor Type | LDMOS | LDMOS |
| Gain | 20.3dB | 16dB |
| DS Breakdown Voltage-Min | 110V | - |
| Power - Output | 275W | 29W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | - |
| Voltage - Test | 50V | 28V |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Submit RFQ: | Submit | Submit |
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