Part Number: MRF6VP21KHR6 vs MRF6V3090NBR1

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Part Number: MRF6VP21KHR6 MRF6V3090NBR1
Manufacturer: NXP USA Inc. NXP USA Inc.
Description: FET RF 2CH 110V 225MHZ NI1230 FET RF 110V 860MHZ TO272-4
Quantity Available: Available Available
Datasheets: - -
Package / Case NI-1230 TO-272BB
Packaging Tape & Reel (TR) Tape & Reel (TR)
Published 2010 2006
Part Status Discontinued Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours) 3 (168 Hours)
ECCN Code EAR99 EAR99
Voltage - Rated 110V 110V
HTS Code 8541.29.00.75 8541.29.00.75
Reach Compliance Code unknown -
Frequency 225MHz 860MHz
Base Part Number MRF6VP21 MRF6V3090
Current - Test 150mA 350mA
Transistor Type LDMOS (Dual) LDMOS
Gain 24dB 22dB
Power - Output 1000W 18W
Voltage - Test 50V 50V
RoHS Status ROHS3 Compliant ROHS3 Compliant
Factory Lead Time - 10 Weeks
Surface Mount - YES
Transistor Element Material - SILICON
JESD-609 Code - e3
Number of Terminations - 4
Terminal Finish - Matte Tin (Sn)
Additional Feature - ESD PROTECTION
Subcategory - FET General Purpose Power
Terminal Position - DUAL
Terminal Form - FLAT
Peak Reflow Temperature (Cel) - 260
Time@Peak Reflow Temperature-Max (s) - 40
JESD-30 Code - R-PDFM-F4
Qualification Status - Not Qualified
Operating Temperature (Max) - 225°C
Number of Elements - 1
Configuration - SINGLE
Operating Mode - ENHANCEMENT MODE
Case Connection - SOURCE
Transistor Application - AMPLIFIER
Polarity/Channel Type - N-CHANNEL
DS Breakdown Voltage-Min - 115V
FET Technology - METAL-OXIDE SEMICONDUCTOR
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