Part Number: MRFE6VS25LR5 vs MRFE6S9200HSR3
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Part Number: | MRFE6VS25LR5 | MRFE6S9200HSR3 |
Manufacturer: | NXP USA Inc. | NXP USA Inc. |
Description: | FET RF 133V 512MHZ NI360L | FET RF 66V 880MHZ NI-880S |
Quantity Available: | Available | Available |
Datasheets: | - | - |
Factory Lead Time | 10 Weeks | - |
Package / Case | NI-360 | NI-880S |
Surface Mount | YES | - |
Transistor Element Material | SILICON | - |
Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
Published | 2012 | 2008 |
Part Status | Active | Obsolete |
Moisture Sensitivity Level (MSL) | Not Applicable | 1 (Unlimited) |
Number of Terminations | 2 | - |
ECCN Code | EAR99 | - |
Voltage - Rated | 133V | 66V |
HTS Code | 8541.29.00.75 | - |
Subcategory | FET General Purpose Power | - |
Terminal Position | DUAL | - |
Terminal Form | FLAT | - |
Peak Reflow Temperature (Cel) | 260 | NOT SPECIFIED |
Frequency | 512MHz | 880MHz |
Time@Peak Reflow Temperature-Max (s) | 40 | NOT SPECIFIED |
Base Part Number | MRFE6VS25 | MRFE6S9200 |
JESD-30 Code | R-PDFM-F2 | - |
Operating Temperature (Max) | 150°C | - |
Operating Temperature (Min) | -40°C | - |
Number of Elements | 1 | - |
Configuration | SINGLE | - |
Operating Mode | ENHANCEMENT MODE | - |
Current - Test | 10mA | 1.4A |
Polarity/Channel Type | N-CHANNEL | - |
Transistor Type | LDMOS | LDMOS |
Gain | 25.9dB | 21dB |
DS Breakdown Voltage-Min | 133V | - |
Power - Output | 25W | 58W |
FET Technology | METAL-OXIDE SEMICONDUCTOR | - |
Voltage - Test | 50V | 28V |
RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
Submit RFQ: | Submit | Submit |