MRFE6VS25LR5

NXP USA Inc. MRFE6VS25LR5

Part Number:
MRFE6VS25LR5
Manufacturer:
NXP USA Inc.
Ventron No:
2474756-MRFE6VS25LR5
Description:
FET RF 133V 512MHZ NI360L
ECAD Model:
Datasheet:
MRFE6VS25LR5

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
NXP USA Inc. MRFE6VS25LR5 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. MRFE6VS25LR5.
  • Factory Lead Time
    10 Weeks
  • Package / Case
    NI-360
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Voltage - Rated
    133V
  • HTS Code
    8541.29.00.75
  • Subcategory
    FET General Purpose Power
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    512MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MRFE6VS25
  • JESD-30 Code
    R-PDFM-F2
  • Operating Temperature (Max)
    150°C
  • Operating Temperature (Min)
    -40°C
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Operating Mode
    ENHANCEMENT MODE
  • Current - Test
    10mA
  • Polarity/Channel Type
    N-CHANNEL
  • Transistor Type
    LDMOS
  • Gain
    25.9dB
  • DS Breakdown Voltage-Min
    133V
  • Power - Output
    25W
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Voltage - Test
    50V
  • RoHS Status
    ROHS3 Compliant
Description
MRFE6VS25LR5 Description   MRFE6VS25LR5 is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes MRFE6VS25LR5 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. MRFE6VS25LR5 has the common source configuration.     MRFE6VS25LR5 Features   Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging for lower junction temperatures     MRFE6VS25LR5 Applications   ISM applications DC large signal applications
MRFE6VS25LR5 More Descriptions
RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.9 @ 512 MHz, 50 V, LDMOS, SOT1791
Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin NI-360H T/RAvnet Japan
Trans RF MOSFET N-CH 133V 3-Pin NI-360 T/R
RF MOSFET Transistors VHV6E 25W50V NI360L
Aluminum Organic Polymer Capacitors 10volts 22uF 20% ESR=28
TRANSISTOR, RF, 133V, NI-360H-2L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-360; No. of
Product Comparison
The three parts on the right have similar specifications to MRFE6VS25LR5.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Package / Case
    Surface Mount
    Transistor Element Material
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Voltage - Rated
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Frequency
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    JESD-30 Code
    Operating Temperature (Max)
    Operating Temperature (Min)
    Number of Elements
    Configuration
    Operating Mode
    Current - Test
    Polarity/Channel Type
    Transistor Type
    Gain
    DS Breakdown Voltage-Min
    Power - Output
    FET Technology
    Voltage - Test
    RoHS Status
    View Compare
  • MRFE6VS25LR5
    MRFE6VS25LR5
    10 Weeks
    NI-360
    YES
    SILICON
    Tape & Reel (TR)
    2012
    Active
    Not Applicable
    2
    EAR99
    133V
    8541.29.00.75
    FET General Purpose Power
    DUAL
    FLAT
    260
    512MHz
    40
    MRFE6VS25
    R-PDFM-F2
    150°C
    -40°C
    1
    SINGLE
    ENHANCEMENT MODE
    10mA
    N-CHANNEL
    LDMOS
    25.9dB
    133V
    25W
    METAL-OXIDE SEMICONDUCTOR
    50V
    ROHS3 Compliant
    -
  • MRFE6S9200HSR3
    -
    NI-880S
    -
    -
    Tape & Reel (TR)
    2008
    Obsolete
    1 (Unlimited)
    -
    -
    66V
    -
    -
    -
    -
    NOT SPECIFIED
    880MHz
    NOT SPECIFIED
    MRFE6S9200
    -
    -
    -
    -
    -
    -
    1.4A
    -
    LDMOS
    21dB
    -
    58W
    -
    28V
    ROHS3 Compliant
  • MRFE6VP6300HSR3
    -
    NI-780S-4
    -
    -
    Tape & Reel (TR)
    2011
    Discontinued
    3 (168 Hours)
    -
    EAR99
    130V
    8541.29.00.75
    -
    -
    -
    -
    230MHz
    -
    MRFE6VP6300
    -
    -
    -
    -
    -
    -
    100mA
    -
    LDMOS (Dual)
    26.5dB
    -
    300W
    -
    50V
    ROHS3 Compliant
  • MRFE6S9130HSR5
    -
    NI-780S
    -
    -
    Tape & Reel (TR)
    2009
    Obsolete
    1 (Unlimited)
    -
    -
    66V
    -
    -
    -
    -
    -
    880MHz
    -
    MRFE6S9130
    -
    -
    -
    -
    -
    -
    950mA
    -
    LDMOS
    19.2dB
    -
    27W
    -
    28V
    ROHS3 Compliant
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 20 October 2023

    TNY268PN Switcher: Symbol, Features, Manufacturer and Applications

    Ⅰ. Overview of TNY268PN switcherⅡ. TNY268PN symbol, footprint and pin configurationⅢ. Technical parameters of TNY268PN switcherⅣ. What are the features of TNY268PN switcher?Ⅴ. Manufacturer of TNY268PN switcherⅥ. What...
  • 20 October 2023

    A Comprehensive Introduction to MJE2955T Transistor

    Ⅰ. Overview of MJE2955T transistorⅡ. Symbol, footprint and pin configuration of MJE2955T transistorⅢ. Technical parameters of MJE2955T transistorⅣ. Features of MJE2955T transistorⅤ. Working principle of MJE2955T transistorⅥ. Absolute...
  • 23 October 2023

    UA741CP Operational Amplifier: Symbol, Equivalent, Dimensions and Applications

    Ⅰ. What is UA741CP operational amplifier?Ⅱ. Symbol and footprint of UA741CP operational amplifierⅢ. Technical parameters of UA741CP operational amplifierⅣ. What are the features of UA741CP operational amplifier?Ⅴ. Dimensions...
  • 23 October 2023

    A Basic Overview of SN74LS00N NAND Gates

    Ⅰ. What are logic gates and NAND gates?Ⅱ. Overview of SN74LS00N NAND gatesⅢ. Symbol and footprint of SN74LS00N NAND gatesⅣ. Technical parameters of SN74LS00N NAND gatesⅤ. Features of...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.