Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
|
|
Part Number: |
FDC6301N |
FDC6036P_F077 |
Manufacturer: |
Fairchild/ON Semiconductor |
Fairchild/ON Semiconductor |
Description: |
MOSFET 2N-CH 25V 0.22A SSOT6 |
MOSFET 2P-CH 20V 5A 6SSOT |
Quantity Available: |
Available |
Available |
Datasheets: |
-
|
FDC6036P
|
Lifecycle Status |
ACTIVE (Last Updated: 1 day ago) |
- |
Factory Lead Time |
10 Weeks |
- |
Contact Plating |
Tin |
- |
Mount |
Surface Mount |
- |
Mounting Type |
Surface Mount |
Surface Mount |
Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
6-SSOT Flat-lead, SuperSOT™-6 FLMP |
Number of Pins |
6 |
- |
Weight |
36mg |
- |
Transistor Element Material |
SILICON |
- |
Operating Temperature |
-55°C~150°C TJ |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
Published |
1997 |
- |
JESD-609 Code |
e3 |
- |
Pbfree Code |
yes |
- |
Part Status |
Active |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
Number of Terminations |
6 |
- |
Termination |
SMD/SMT |
- |
ECCN Code |
EAR99 |
- |
Resistance |
4Ohm |
- |
Additional Feature |
LOGIC LEVEL COMPATIBLE |
- |
Subcategory |
FET General Purpose Power |
- |
Voltage - Rated DC |
25V |
- |
Max Power Dissipation |
900mW |
- |
Terminal Form |
GULL WING |
- |
Current Rating |
220mA |
- |
Number of Elements |
2 |
- |
Element Configuration |
Dual |
- |
Operating Mode |
ENHANCEMENT MODE |
- |
Power Dissipation |
900mW |
- |
Turn On Delay Time |
5 ns |
- |
Power - Max |
700mW |
900mW |
FET Type |
2 N-Channel (Dual) |
2 P-Channel (Dual) |
Transistor Application |
SWITCHING |
- |
Rds On (Max) @ Id, Vgs |
4 Ω @ 400mA, 4.5V |
44mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250μA |
1.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
9.5pF @ 10V |
992pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs |
0.7nC @ 4.5V |
14nC @ 4.5V |
Rise Time |
4.5ns |
- |
Fall Time (Typ) |
4.5 ns |
- |
Turn-Off Delay Time |
4 ns |
- |
Continuous Drain Current (ID) |
220mA |
- |
Threshold Voltage |
850mV |
- |
Gate to Source Voltage (Vgs) |
8V |
- |
Drain to Source Breakdown Voltage |
25V |
- |
Dual Supply Voltage |
25V |
- |
FET Technology |
METAL-OXIDE SEMICONDUCTOR |
- |
FET Feature |
Logic Level Gate |
Logic Level Gate |
Nominal Vgs |
850 mV |
- |
Height |
1mm |
- |
Length |
3mm |
- |
Width |
1.7mm |
- |
REACH SVHC |
No SVHC |
- |
Radiation Hardening |
No |
- |
RoHS Status |
ROHS3 Compliant |
- |
Lead Free |
Lead Free |
- |
Supplier Device Package |
- |
SuperSOT™-6 |
Series |
- |
PowerTrench® |
Current - Continuous Drain (Id) @ 25°C |
- |
5A |
Drain to Source Voltage (Vdss) |
- |
20V |
Submit RFQ: |
Submit |
Submit |