Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
|
|
Part Number: |
FDC6305N |
FDC6333C |
Manufacturer: |
Fairchild/ON Semiconductor |
Fairchild/ON Semiconductor |
Description: |
MOSFET 2N-CH 20V 2.7A SSOT6 |
MOSFET N/P-CH 30V 2.5A/2A SSOT6 |
Quantity Available: |
Available |
Available |
Datasheets: |
-
|
-
|
Package / Case |
TSOP-6 |
SOT-23-6 Thin, TSOT-23-6 |
Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
RoHS Status |
RoHS Compliant |
ROHS3 Compliant |
Lifecycle Status |
- |
ACTIVE (Last Updated: 2 days ago) |
Factory Lead Time |
- |
10 Weeks |
Contact Plating |
- |
Tin |
Mount |
- |
Surface Mount |
Mounting Type |
- |
Surface Mount |
Number of Pins |
- |
6 |
Weight |
- |
36mg |
Transistor Element Material |
- |
SILICON |
Operating Temperature |
- |
-55°C~150°C TJ |
Series |
- |
PowerTrench® |
Published |
- |
2017 |
JESD-609 Code |
- |
e3 |
Pbfree Code |
- |
yes |
Part Status |
- |
Active |
Moisture Sensitivity Level (MSL) |
- |
1 (Unlimited) |
Number of Terminations |
- |
6 |
ECCN Code |
- |
EAR99 |
Resistance |
- |
95MOhm |
Subcategory |
- |
Other Transistors |
Max Power Dissipation |
- |
960mW |
Terminal Form |
- |
GULL WING |
Current Rating |
- |
2.5A |
Number of Elements |
- |
2 |
Number of Channels |
- |
2 |
Element Configuration |
- |
Dual |
Operating Mode |
- |
ENHANCEMENT MODE |
Power Dissipation |
- |
960mW |
Turn On Delay Time |
- |
4.5 ns |
Power - Max |
- |
700mW |
FET Type |
- |
N and P-Channel |
Transistor Application |
- |
SWITCHING |
Rds On (Max) @ Id, Vgs |
- |
95m Ω @ 2.5A, 10V |
Vgs(th) (Max) @ Id |
- |
3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds |
- |
282pF @ 15V |
Current - Continuous Drain (Id) @ 25°C |
- |
2.5A 2A |
Gate Charge (Qg) (Max) @ Vgs |
- |
6.6nC @ 10V |
Rise Time |
- |
13ns |
Drain to Source Voltage (Vdss) |
- |
30V |
Polarity/Channel Type |
- |
N-CHANNEL AND P-CHANNEL |
Fall Time (Typ) |
- |
13 ns |
Turn-Off Delay Time |
- |
11 ns |
Continuous Drain Current (ID) |
- |
2.5A |
Threshold Voltage |
- |
1.8V |
Gate to Source Voltage (Vgs) |
- |
25V |
Drain to Source Breakdown Voltage |
- |
-30V |
FET Technology |
- |
METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) |
- |
150°C |
FET Feature |
- |
Logic Level Gate |
Nominal Vgs |
- |
1.8 V |
Height |
- |
1mm |
Length |
- |
3mm |
Width |
- |
1.7mm |
REACH SVHC |
- |
No SVHC |
Radiation Hardening |
- |
No |
Lead Free |
- |
Lead Free |
Submit RFQ: |
Submit |
Submit |