| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
FDC6305N |
FDC6318P |
| Manufacturer: |
Fairchild/ON Semiconductor |
Fairchild/ON Semiconductor |
| Description: |
MOSFET 2N-CH 20V 2.7A SSOT6 |
MOSFET 2P-CH 12V 2.5A SSOT-6 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Package / Case |
TSOP-6 |
SOT-23-6 Thin, TSOT-23-6 |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| RoHS Status |
RoHS Compliant |
ROHS3 Compliant |
| Lifecycle Status |
- |
ACTIVE (Last Updated: 2 days ago) |
| Factory Lead Time |
- |
10 Weeks |
| Mount |
- |
Surface Mount |
| Mounting Type |
- |
Surface Mount |
| Number of Pins |
- |
6 |
| Weight |
- |
36mg |
| Transistor Element Material |
- |
SILICON |
| Operating Temperature |
- |
-55°C~150°C TJ |
| Series |
- |
PowerTrench® |
| Published |
- |
2001 |
| JESD-609 Code |
- |
e3 |
| Pbfree Code |
- |
yes |
| Part Status |
- |
Active |
| Moisture Sensitivity Level (MSL) |
- |
1 (Unlimited) |
| Number of Terminations |
- |
6 |
| Termination |
- |
SMD/SMT |
| ECCN Code |
- |
EAR99 |
| Resistance |
- |
90MOhm |
| Terminal Finish |
- |
Tin (Sn) |
| Subcategory |
- |
Other Transistors |
| Voltage - Rated DC |
- |
-12V |
| Max Power Dissipation |
- |
960mW |
| Terminal Form |
- |
GULL WING |
| Current Rating |
- |
-2.5A |
| Number of Elements |
- |
2 |
| Number of Channels |
- |
2 |
| Element Configuration |
- |
Dual |
| Operating Mode |
- |
ENHANCEMENT MODE |
| Power Dissipation |
- |
960mW |
| Turn On Delay Time |
- |
9 ns |
| Power - Max |
- |
700mW |
| FET Type |
- |
2 P-Channel (Dual) |
| Transistor Application |
- |
SWITCHING |
| Rds On (Max) @ Id, Vgs |
- |
90m Ω @ 2.5A, 4.5V |
| Vgs(th) (Max) @ Id |
- |
1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds |
- |
455pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C |
- |
2.5A |
| Gate Charge (Qg) (Max) @ Vgs |
- |
8nC @ 4.5V |
| Rise Time |
- |
14ns |
| Fall Time (Typ) |
- |
14 ns |
| Turn-Off Delay Time |
- |
21 ns |
| Continuous Drain Current (ID) |
- |
-2.5A |
| Threshold Voltage |
- |
-700mV |
| Gate to Source Voltage (Vgs) |
- |
8V |
| Drain to Source Breakdown Voltage |
- |
-12V |
| Dual Supply Voltage |
- |
12V |
| FET Technology |
- |
METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) |
- |
150°C |
| FET Feature |
- |
Logic Level Gate |
| Nominal Vgs |
- |
700 mV |
| Height |
- |
1.1mm |
| Length |
- |
3mm |
| Width |
- |
1.7mm |
| REACH SVHC |
- |
No SVHC |
| Radiation Hardening |
- |
No |
| Lead Free |
- |
Lead Free |
| Submit RFQ: |
Submit |
Submit |
