Part Number: PDTA114YQAZ vs PDTA113ZS,126

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Part Number: PDTA114YQAZ PDTA113ZS,126
Manufacturer: Nexperia USA Inc. NXP USA Inc.
Description: TRANS PREBIAS PNP 3DFN TRANS PREBIAS PNP 500MW TO92-3
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 4 Weeks -
Mount Surface Mount -
Mounting Type Surface Mount Through Hole
Package / Case 3-XDFN Exposed Pad TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON -
Packaging Tape & Reel (TR) Tape & Box (TB)
Series Automotive, AEC-Q101 -
Published 2014 2009
Part Status Active Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 -
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7 -
Max Power Dissipation 280mW -
Terminal Position DUAL -
Terminal Form NO LEAD -
Peak Reflow Temperature (Cel) NOT SPECIFIED -
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED -
Pin Count 3 -
Reference Standard AEC-Q101; IEC-60134 -
JESD-30 Code R-PDSO-N3 -
Number of Elements 1 -
Configuration SINGLE WITH BUILT-IN RESISTOR -
Case Connection COLLECTOR -
Power - Max 280mW 500mW
Transistor Application SWITCHING -
Polarity/Channel Type PNP -
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 100mV -
Max Collector Current 100mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 5V 35 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA 1μA
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA 150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V -
Transition Frequency 180MHz -
Frequency - Transition 180MHz -
Resistor - Base (R1) 10 k Ω 1 k Ω
Resistor - Emitter Base (R2) 47 k Ω 10 k Ω
RoHS Status ROHS3 Compliant ROHS3 Compliant
Base Part Number - PDTA113
Voltage - Collector Emitter Breakdown (Max) - 50V
Current - Collector (Ic) (Max) - 100mA
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