Nexperia USA Inc. PDTA114YQAZ
- Part Number:
- PDTA114YQAZ
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2471944-PDTA114YQAZ
- Description:
- TRANS PREBIAS PNP 3DFN
- Datasheet:
- PDTA114YQAZ
Nexperia USA Inc. PDTA114YQAZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PDTA114YQAZ.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XDFN Exposed Pad
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 4.7
- Max Power Dissipation280mW
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Reference StandardAEC-Q101; IEC-60134
- JESD-30 CodeR-PDSO-N3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Case ConnectionCOLLECTOR
- Power - Max280mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)100mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency180MHz
- Frequency - Transition180MHz
- Resistor - Base (R1)10 k Ω
- Resistor - Emitter Base (R2)47 k Ω
- RoHS StatusROHS3 Compliant
PDTA114YQAZ Overview
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTA114YQAZ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTA114YQAZ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Nexperia USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTA114YQAZ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTA114YQAZ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTA114YQAZ More Descriptions
PDTA143X/123J/143Z/114YQA series - 50 V, 100 mA PNP resistor-equipped transistors
Trans Digital BJT PNP 50V 4-Pin DFN T/RAvnet Japan
Rf Transistor Rohs Compliant: Yes |Nexperia PDTA114YQAZ
TRANS PREBIAS PNP 50V 0.1A 3DFN
SOT-1215 Digital Transistors ROHS
Trans Digital BJT PNP 50V 4-Pin DFN T/RAvnet Japan
Rf Transistor Rohs Compliant: Yes |Nexperia PDTA114YQAZ
TRANS PREBIAS PNP 50V 0.1A 3DFN
SOT-1215 Digital Transistors ROHS
The three parts on the right have similar specifications to PDTA114YQAZ.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialPackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountReference StandardJESD-30 CodeNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionResistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusBase Part NumberVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Number of PinsJESD-609 CodeECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperaturePolarityElement ConfigurationMax Breakdown VoltageRadiation HardeningContact PlatingLead FreeView Compare
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PDTA114YQAZ4 WeeksSurface MountSurface Mount3-XDFN Exposed PadSILICONTape & Reel (TR)Automotive, AEC-Q1012014Active1 (Unlimited)3BUILT IN BIAS RESISTANCE RATIO IS 4.7280mWDUALNO LEADNOT SPECIFIEDNOT SPECIFIED3AEC-Q101; IEC-60134R-PDSO-N31SINGLE WITH BUILT-IN RESISTORCOLLECTOR280mWSWITCHINGPNPPNP - Pre-Biased100mV100mA100 @ 5mA 5V1μA100mV @ 250μA, 5mA50V180MHz180MHz10 k Ω47 k ΩROHS3 Compliant----------------
-
--Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-Tape & Box (TB)-2009Obsolete1 (Unlimited)-------------500mW--PNP - Pre-Biased--35 @ 5mA 5V1μA150mV @ 500μA, 10mA---1 k Ω10 k ΩROHS3 CompliantPDTA11350V100mA------------
-
8 WeeksSurface MountSurface MountSC-101, SOT-883-Tape & Reel (TR)-2009Active1 (Unlimited)3BUILT IN BIAS RESISTOR250mWBOTTOM-260303--1-COLLECTOR-SWITCHING-PNP - Pre-Biased50V100mA100 @ 1mA 5V1μA150mV @ 250μA, 5mA50V--100 k Ω-ROHS3 CompliantPDTA115--3e3EAR99Tin (Sn)150°C-65°CPNPSingle50VNo--
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4 WeeksSurface MountSurface MountTO-236-3, SC-59, SOT-23-3-Tape & Reel (TR)-2009Active1 (Unlimited)3BUILT-IN BIAS RESISTOR RATIO IS 10250mWDUALGULL WING260303--1---SWITCHING-PNP - Pre-Biased50V100mA35 @ 5mA 5V-150mV @ 500μA, 10mA50V--1 k Ω10 k ΩROHS3 CompliantPDTA113--3e3EAR99-150°C-65°CPNPSingle50VNoTinLead Free
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