Part Number: PDTA114YQAZ vs PDTA113ZT,215

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Part Number: PDTA114YQAZ PDTA113ZT,215
Manufacturer: Nexperia USA Inc. Nexperia USA Inc.
Description: TRANS PREBIAS PNP 3DFN TRANS PREBIAS PNP 250MW TO236AB
Quantity Available: Available Available
Datasheets: - -
Factory Lead Time 4 Weeks 4 Weeks
Mount Surface Mount Surface Mount
Mounting Type Surface Mount Surface Mount
Package / Case 3-XDFN Exposed Pad TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON -
Packaging Tape & Reel (TR) Tape & Reel (TR)
Series Automotive, AEC-Q101 -
Published 2014 2009
Part Status Active Active
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Number of Terminations 3 3
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT-IN BIAS RESISTOR RATIO IS 10
Max Power Dissipation 280mW 250mW
Terminal Position DUAL DUAL
Terminal Form NO LEAD GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Pin Count 3 3
Reference Standard AEC-Q101; IEC-60134 -
JESD-30 Code R-PDSO-N3 -
Number of Elements 1 1
Configuration SINGLE WITH BUILT-IN RESISTOR -
Case Connection COLLECTOR -
Power - Max 280mW -
Transistor Application SWITCHING SWITCHING
Polarity/Channel Type PNP -
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 100mV 50V
Max Collector Current 100mA 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 5V 35 @ 5mA 5V
Current - Collector Cutoff (Max) 1μA -
Vce Saturation (Max) @ Ib, Ic 100mV @ 250μA, 5mA 150mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage 50V 50V
Transition Frequency 180MHz -
Frequency - Transition 180MHz -
Resistor - Base (R1) 10 k Ω 1 k Ω
Resistor - Emitter Base (R2) 47 k Ω 10 k Ω
RoHS Status ROHS3 Compliant ROHS3 Compliant
Contact Plating - Tin
Number of Pins - 3
JESD-609 Code - e3
ECCN Code - EAR99
Max Operating Temperature - 150°C
Min Operating Temperature - -65°C
Base Part Number - PDTA113
Polarity - PNP
Element Configuration - Single
Max Breakdown Voltage - 50V
Radiation Hardening - No
Lead Free - Lead Free
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