| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
RN2409,LF |
RN2427TE85LF |
| Manufacturer: |
Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage |
| Description: |
TRANS PREBIAS PNP 50V 0.2W SMINI |
TRANS PREBIAS PNP 200MW SMINI |
| Quantity Available: |
Available |
Available |
| Datasheets: |
RN2407-9 ~
|
-
|
| Factory Lead Time |
12 Weeks |
12 Weeks |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
TO-236-3, SC-59, SOT-23-3 |
| Packaging |
Cut Tape (CT) |
Tape & Reel (TR) |
| Published |
2016 |
2009 |
| Part Status |
Discontinued |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Max Power Dissipation |
200mW |
200mW |
| Polarity |
PNP |
PNP |
| Transistor Type |
PNP - Pre-Biased |
PNP - Pre-Biased |
| Collector Emitter Voltage (VCEO) |
-50V |
50V |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
70 @ 10mA 5V |
90 @ 100mA 1V |
| Current - Collector Cutoff (Max) |
500nA |
500nA |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 250μA, 5mA |
250mV @ 1mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
- |
| Current - Collector (Ic) (Max) |
100mA |
- |
| Frequency - Transition |
200MHz |
200MHz |
| Emitter Base Voltage (VEBO) |
-15V |
-6V |
| hFE Min |
70 |
90 |
| Resistor - Base (R1) |
47 k Ω |
2.2 k Ω |
| Continuous Collector Current |
-100mA |
-800mA |
| Resistor - Emitter Base (R2) |
22 k Ω |
10 k Ω |
| RoHS Status |
RoHS Compliant |
RoHS Compliant |
| Mount |
- |
Surface Mount |
| Number of Pins |
- |
3 |
| Number of Terminations |
- |
3 |
| ECCN Code |
- |
EAR99 |
| Max Operating Temperature |
- |
150°C |
| Min Operating Temperature |
- |
-55°C |
| Additional Feature |
- |
BUILT IN BIAS RESISTOR RATIO 4.55 |
| HTS Code |
- |
8541.21.00.75 |
| Subcategory |
- |
BIP General Purpose Small Signal |
| Terminal Position |
- |
DUAL |
| Terminal Form |
- |
GULL WING |
| Pin Count |
- |
3 |
| Number of Elements |
- |
1 |
| Element Configuration |
- |
Single |
| Power Dissipation |
- |
200mW |
| Transistor Application |
- |
SWITCHING |
| Max Collector Current |
- |
800mA |
| Collector Emitter Breakdown Voltage |
- |
50V |
| Max Frequency |
- |
200MHz |
| Transition Frequency |
- |
200MHz |
| Radiation Hardening |
- |
No |
| Submit RFQ: |
Submit |
Submit |
