Part Number: RN2409,LF vs RN2404TE85LF

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Part Number: RN2409,LF RN2404TE85LF
Manufacturer: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Description: TRANS PREBIAS PNP 50V 0.2W SMINI TRANS PREBIAS PNP 0.2W S-MINI
Quantity Available: Available Available
Datasheets: RN2407-9 ~ -
Factory Lead Time 12 Weeks 11 Weeks
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT) Cut Tape (CT)
Published 2016 2014
Part Status Discontinued Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Max Power Dissipation 200mW 200mW
Polarity PNP PNP
Transistor Type PNP - Pre-Biased PNP - Pre-Biased
Collector Emitter Voltage (VCEO) -50V 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 5V 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V -
Current - Collector (Ic) (Max) 100mA -
Frequency - Transition 200MHz 200MHz
Emitter Base Voltage (VEBO) -15V -10V
hFE Min 70 80
Resistor - Base (R1) 47 k Ω 47 k Ω
Continuous Collector Current -100mA -100mA
Resistor - Emitter Base (R2) 22 k Ω 47 k Ω
RoHS Status RoHS Compliant RoHS Compliant
Mount - Surface Mount
Number of Pins - 3
Transistor Element Material - SILICON
Subcategory - BIP General Purpose Small Signal
Reach Compliance Code - unknown
Number of Elements - 1
Element Configuration - Dual
Power - Max - 200mW
Max Collector Current - 100mA
Collector Emitter Breakdown Voltage - 50V
Max Breakdown Voltage - 50V
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