| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
DTB123YUT106 |
DTB114ECT116 |
| Manufacturer: |
Rohm Semiconductor |
Rohm Semiconductor |
| Description: |
TRANS PREBIAS PNP 200MW UMT3 |
PNP -500MA/-50V DIGITAL TRANSIST |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
-
|
| Factory Lead Time |
13 Weeks |
13 Weeks |
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
SC-70, SOT-323 |
TO-236-3, SC-59, SOT-23-3 |
| Number of Pins |
3 |
- |
| Packaging |
Tape & Reel (TR) |
Tape & Reel (TR) |
| Published |
2009 |
2016 |
| JESD-609 Code |
e1 |
- |
| Pbfree Code |
yes |
- |
| Part Status |
Active |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
3 |
3 |
| ECCN Code |
EAR99 |
EAR99 |
| Terminal Finish |
TIN SILVER COPPER |
- |
| Max Operating Temperature |
150°C |
- |
| Min Operating Temperature |
-55°C |
- |
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 4.5 |
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 |
| HTS Code |
8541.21.00.75 |
8541.21.00.75 |
| Subcategory |
BIP General Purpose Small Signal |
- |
| Max Power Dissipation |
200mW |
200mW |
| Terminal Position |
DUAL |
DUAL |
| Terminal Form |
GULL WING |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
10 |
NOT SPECIFIED |
| Base Part Number |
DTB123 |
- |
| Pin Count |
3 |
3 |
| Number of Elements |
1 |
1 |
| Polarity |
PNP |
- |
| Element Configuration |
Single |
- |
| Transistor Application |
SWITCHING |
SWITCHING |
| Transistor Type |
PNP - Pre-Biased |
PNP - Pre-Biased |
| Collector Emitter Voltage (VCEO) |
300mV |
300mV |
| Max Collector Current |
500mA |
500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
56 @ 50mA 5V |
56 @ 50mA 5V |
| Current - Collector Cutoff (Max) |
500nA |
500nA |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 2.5mA, 50mA |
300mV @ 2.5mA, 50mA |
| Collector Emitter Breakdown Voltage |
50V |
50V |
| Transition Frequency |
200MHz |
200MHz |
| Max Breakdown Voltage |
50V |
50V |
| Frequency - Transition |
200MHz |
200MHz |
| hFE Min |
56 |
- |
| Resistor - Base (R1) |
2.2 k Ω |
10 k Ω |
| Continuous Collector Current |
-500mA |
- |
| Resistor - Emitter Base (R2) |
10 k Ω |
10 k Ω |
| Radiation Hardening |
No |
- |
| RoHS Status |
ROHS3 Compliant |
ROHS3 Compliant |
| Lead Free |
Lead Free |
- |
| Transistor Element Material |
- |
SILICON |
| Reach Compliance Code |
- |
not_compliant |
| JESD-30 Code |
- |
R-PDSO-G3 |
| Qualification Status |
- |
Not Qualified |
| Operating Temperature (Max) |
- |
150°C |
| Configuration |
- |
SINGLE WITH BUILT-IN RESISTOR |
| Power - Max |
- |
200mW |
| Polarity/Channel Type |
- |
PNP |
| VCEsat-Max |
- |
0.3 V |
| Submit RFQ: |
Submit |
Submit |
