Rohm Semiconductor DTB123YUT106

Name: DTB123YUT106
Brand: Rohm Semiconductor
SKU: 2469623-DTB123YUT106
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: DTB123YUT106

Manufacturer:: Rohm Semiconductor

Ventron No:: 2469623-DTB123YUT106

Description:: TRANS PREBIAS PNP 200MW UMT3

ECAD Model:

Datasheet:: DTB123YUT106

Specifications

Rohm Semiconductor DTB123YUT106 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor DTB123YUT106.

Factory Lead Time
13 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN SILVER COPPER
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 4.5
HTS Code
8541.21.00.75
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
10
Base Part Number
DTB123
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Transistor Application
SWITCHING
Transistor Type
PNP - Pre-Biased
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 50mA 5V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Collector Emitter Breakdown Voltage
50V
Transition Frequency
200MHz
Max Breakdown Voltage
50V
Frequency - Transition
200MHz
hFE Min
56
Resistor - Base (R1)
2.2 k Ω
Continuous Collector Current
-500mA
Resistor - Emitter Base (R2)
10 k Ω
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

DTB123YUT106 Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet DTB123YUT106 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of DTB123YUT106. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

DTB123YUT106 More Descriptions

Trans Digital BJT PNP 50V 500mA 3-Pin UMT T/R
PNP DIGITAL 50V 2,2K/10K 0,5A UMT3
DIGITAL TRANS, -50V, -0.5A, SOT-323; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: -50V; Continuous Collector Current Ic: -500mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: 0.22(Ratio); RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: DTB123Y Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
TRANS PREBIAS PNP 50V 0.5A UMT3

Product Comparison

The three parts on the right have similar specifications to DTB123YUT106.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Max Power Dissipation

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Max Breakdown Voltage

Frequency - Transition

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Radiation Hardening

RoHS Status

Lead Free

Transistor Element Material

REACH SVHC

Reach Compliance Code

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Configuration

Power - Max

Polarity/Channel Type

VCEsat-Max

Voltage - Rated DC

Current Rating

Max Output Current

Operating Supply Voltage

Power Dissipation

View Compare
DTB123YUT106

Rohm Semiconductor

13 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

3

Tape & Reel (TR)

2009

e1

yes

Active

1 (Unlimited)

3

EAR99

TIN SILVER COPPER

150°C

-55°C

BUILT-IN BIAS RESISTOR RATIO IS 4.5

8541.21.00.75

BIP General Purpose Small Signal

200mW

DUAL

GULL WING

260

10

DTB123

3

1

PNP

Single

SWITCHING

PNP - Pre-Biased

300mV

500mA

56 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

50V

200MHz

50V

200MHz

56

2.2 k Ω

-500mA

10 k Ω

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
DTB123YCT116

Rohm Semiconductor

13 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Tape & Reel (TR)

1998

e1

-

Active

1 (Unlimited)

3

EAR99

TIN SILVER COPPER

150°C

-

BUILT-IN BIAS RESISTOR RATIO IS 4.5

8541.21.00.75

BIP General Purpose Small Signal

200mW

DUAL

GULL WING

260

10

-

3

1

PNP

Single

SWITCHING

PNP - Pre-Biased

300mV

500mA

56 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

50V

200MHz

50V

200MHz

-

2.2 k Ω

-

10 k Ω

No

ROHS3 Compliant

-

SILICON

No SVHC

-

-

-

-

-

-

-

-

-

-

-

-

-

DTB123YUT106 vs DTB123YCT116
DTB114ECT116

Rohm Semiconductor

13 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

Tape & Reel (TR)

2016

-

-

Active

1 (Unlimited)

3

EAR99

-

-

-

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

8541.21.00.75

-

200mW

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

-

3

1

-

-

SWITCHING

PNP - Pre-Biased

300mV

500mA

56 @ 50mA 5V

500nA

300mV @ 2.5mA, 50mA

50V

200MHz

50V

200MHz

-

10 k Ω

-

10 k Ω

-

ROHS3 Compliant

-

SILICON

-

not_compliant

R-PDSO-G3

Not Qualified

150°C

SINGLE WITH BUILT-IN RESISTOR

200mW

PNP

0.3 V

-

-

-

-

-

DTB123YUT106 vs DTB114ECT116
DTB122JKT146

Rohm Semiconductor

7 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

Tape & Reel (TR)

2007

e1

yes

Not For New Designs

1 (Unlimited)

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

150°C

-

-

8541.21.00.75

BIP General Purpose Small Signal

200mW

DUAL

GULL WING

260

10

DTB122

3

1

PNP

Single

SWITCHING

PNP - Pre-Biased

300mV

500mA

47 @ 50mA 5V

10μA

300mV @ 2.5mA, 50mA

50V

200MHz

-

200MHz

47

220 Ω

-500mA

4.7 k Ω

No

ROHS3 Compliant

Lead Free

SILICON

-

-

-

-

-

-

-

-

-

-50V

-500mA

500mA

50V

200mW

DTB123YUT106 vs DTB122JKT146