| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
NSBC143TPDXV6T1 |
NSBC124XDXV6T1 |
| Manufacturer: |
ON Semiconductor |
ON Semiconductor |
| Description: |
TRANS PREBIAS NPN/PNP SOT563 |
TRANS 2NPN PREBIAS 0.5W SOT563 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
NSBC114EPDXV6T1,5 Series
|
NSBC114EDXV6Tx
|
| Mount |
Surface Mount |
- |
| Package / Case |
SOT-563 |
SOT-563, SOT-666 |
| Packaging |
Cut Tape (CT) |
Tape & Reel (TR) |
| Published |
2008 |
- |
| JESD-609 Code |
e3 |
e3 |
| Part Status |
Obsolete |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
6 |
6 |
| ECCN Code |
EAR99 |
- |
| Terminal Finish |
Tin (Sn) |
MATTE TIN |
| Max Operating Temperature |
150°C |
- |
| Min Operating Temperature |
-55°C |
- |
| Additional Feature |
BUILT IN BIAS RESISTOR |
BUILT IN BIAS RESISTOR RATIO 2.14 |
| Subcategory |
BIP General Purpose Small Signal |
- |
| Voltage - Rated DC |
50V |
- |
| Max Power Dissipation |
500mW |
- |
| Terminal Form |
FLAT |
FLAT |
| Peak Reflow Temperature (Cel) |
260 |
260 |
| Reach Compliance Code |
unknown |
unknown |
| Current Rating |
100mA |
- |
| Time@Peak Reflow Temperature-Max (s) |
40 |
40 |
| Pin Count |
6 |
6 |
| JESD-30 Code |
R-PDSO-F6 |
R-PDSO-F6 |
| Qualification Status |
Not Qualified |
COMMERCIAL |
| Number of Elements |
2 |
2 |
| Polarity |
PNP |
- |
| Element Configuration |
Dual |
- |
| Power Dissipation |
357mW |
- |
| Transistor Application |
SWITCHING |
SWITCHING |
| Collector Emitter Voltage (VCEO) |
250mV |
- |
| Max Collector Current |
100mA |
- |
| Collector Emitter Breakdown Voltage |
50V |
- |
| hFE Min |
160 |
- |
| DC Current Gain-Min (hFE) |
160 |
- |
| Continuous Collector Current |
100mA |
- |
| RoHS Status |
Non-RoHS Compliant |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
- |
| Mounting Type |
- |
Surface Mount |
| Surface Mount |
- |
YES |
| Transistor Element Material |
- |
SILICON |
| Pbfree Code |
- |
yes |
| Configuration |
- |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max |
- |
500mW |
| Polarity/Channel Type |
- |
NPN |
| Transistor Type |
- |
2 NPN - Pre-Biased (Dual) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
- |
80 @ 5mA 10V |
| Current - Collector Cutoff (Max) |
- |
500nA |
| Vce Saturation (Max) @ Ib, Ic |
- |
250mV @ 1mA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) |
- |
50V |
| Current - Collector (Ic) (Max) |
- |
100mA |
| Resistor - Base (R1) |
- |
22k Ω |
| Resistor - Emitter Base (R2) |
- |
47k Ω |
| Submit RFQ: |
Submit |
Submit |
