Part Number: RN1966FE(TE85L,F) vs RN1968FE(TE85L,F)

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Part Number: RN1966FE(TE85L,F) RN1968FE(TE85L,F)
Manufacturer: Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6 TRANS 2NPN PREBIAS 0.1W ES6
Quantity Available: Available Available
Datasheets: RN1961-66FE RN1967FE-69FE
Mount Surface Mount -
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Transistor Element Material SILICON SILICON
Packaging Cut Tape (CT) Tape & Reel (TR)
Published 2014 2014
Part Status Obsolete Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Subcategory BIP General Purpose Small Signal BIP General Purpose Small Signal
Max Power Dissipation 100mW -
Number of Elements 2 2
Polarity NPN -
Element Configuration Dual -
Transistor Type 2 NPN - Pre-Biased (Dual) 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV -
Max Collector Current 100mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V 80 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V -
Max Breakdown Voltage 50V -
Frequency - Transition 250MHz 250MHz
Emitter Base Voltage (VEBO) 5V -
hFE Min 80 -
Resistor - Base (R1) 4.7k Ω 22k Ω
Continuous Collector Current 100mA -
Resistor - Emitter Base (R2) 47k Ω 47k Ω
RoHS Status RoHS Compliant RoHS Compliant
Surface Mount - YES
Power - Max - 100mW
Polarity/Channel Type - NPN
Voltage - Collector Emitter Breakdown (Max) - 50V
Current - Collector (Ic) (Max) - 100mA
Power Dissipation-Max (Abs) - 0.1W
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