| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
RN1966FE(TE85L,F) |
RN1962FE(TE85L,F) |
| Manufacturer: |
Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage |
| Description: |
TRANS 2NPN PREBIAS 0.1W ES6 |
TRANS 2NPN PREBIAS 0.1W ES6 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
RN1961-66FE
|
RN1961-66FE
|
| Mount |
Surface Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
SOT-563, SOT-666 |
| Transistor Element Material |
SILICON |
SILICON |
| Packaging |
Cut Tape (CT) |
Cut Tape (CT) |
| Published |
2014 |
2014 |
| Part Status |
Obsolete |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Subcategory |
BIP General Purpose Small Signal |
BIP General Purpose Small Signal |
| Max Power Dissipation |
100mW |
100mW |
| Number of Elements |
2 |
2 |
| Polarity |
NPN |
NPN |
| Element Configuration |
Dual |
Dual |
| Transistor Type |
2 NPN - Pre-Biased (Dual) |
2 NPN - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) |
300mV |
300mV |
| Max Collector Current |
100mA |
100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 10mA 5V |
50 @ 10mA 5V |
| Current - Collector Cutoff (Max) |
100nA ICBO |
100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 250μA, 5mA |
300mV @ 250μA, 5mA |
| Collector Emitter Breakdown Voltage |
50V |
50V |
| Max Breakdown Voltage |
50V |
50V |
| Frequency - Transition |
250MHz |
250MHz |
| Emitter Base Voltage (VEBO) |
5V |
10V |
| hFE Min |
80 |
50 |
| Resistor - Base (R1) |
4.7k Ω |
10k Ω |
| Continuous Collector Current |
100mA |
100mA |
| Resistor - Emitter Base (R2) |
47k Ω |
10k Ω |
| RoHS Status |
RoHS Compliant |
RoHS Compliant |
| Reach Compliance Code |
- |
unknown |
| Submit RFQ: |
Submit |
Submit |
