| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
RN4987FE,LF(CB |
RN4907(T5L,F,T) |
| Manufacturer: |
Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage |
| Description: |
TRANS NPN/PNP PREBIAS 0.1W ES6 |
TRANS NPN/PNP PREBIAS 0.2W US6 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
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|
| Factory Lead Time |
16 Weeks |
- |
| Mount |
Surface Mount |
- |
| Published |
2014 |
2014 |
| Power Dissipation-Max |
100mW |
- |
| Collector Emitter Voltage (VCEO) |
300mV |
- |
| Max Collector Current |
100mA |
- |
| Collector Emitter Breakdown Voltage |
50V |
- |
| Max Breakdown Voltage |
50V |
- |
| Frequency - Transition |
200MHz |
200MHz |
| RoHS Status |
RoHS Compliant |
- |
| Mounting Type |
- |
Surface Mount |
| Package / Case |
- |
6-TSSOP, SC-88, SOT-363 |
| Packaging |
- |
Tape & Reel (TR) |
| Part Status |
- |
Obsolete |
| Moisture Sensitivity Level (MSL) |
- |
1 (Unlimited) |
| Power - Max |
- |
200mW |
| Transistor Type |
- |
1 NPN, 1 PNP - Pre-Biased (Dual) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
- |
80 @ 10mA 5V |
| Current - Collector Cutoff (Max) |
- |
100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic |
- |
300mV @ 250μA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) |
- |
50V |
| Current - Collector (Ic) (Max) |
- |
100mA |
| Resistor - Base (R1) |
- |
10k Ω |
| Resistor - Emitter Base (R2) |
- |
47k Ω |
| Submit RFQ: |
Submit |
Submit |
