Toshiba Semiconductor and Storage RN4987FE,LF(CB
- Part Number:
- RN4987FE,LF(CB
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2461430-RN4987FE,LF(CB
- Description:
- TRANS NPN/PNP PREBIAS 0.1W ES6
- ECAD Model:
-
- Datasheet:
- RN4987FE,LF(CB
Toshiba Semiconductor and Storage RN4987FE,LF(CB technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN4987FE,LF(CB.
- Factory Lead Time16 Weeks
- MountSurface Mount
- Published2014
- Power Dissipation-Max100mW
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- Frequency - Transition200MHz
- RoHS StatusRoHS Compliant
RN4987FE,LF(CB Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4987FE,LF(CB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4987FE,LF(CB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN4987FE,LF(CB or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN4987FE,LF(CB. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN4987FE,LF(CB More Descriptions
Surface Mount RoHS Compliant Pre-Biased Bipolar Transistor (BJT) 100mA 100mW 200MHz 50V
TRANS NPN/PNP PREBIAS 0.1W ES6
TRANS NPN/PNP PREBIAS 0.1W ES6
The three parts on the right have similar specifications to RN4987FE,LF(CB.
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ImagePart NumberManufacturerFactory Lead TimeMountPublishedPower Dissipation-MaxCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageFrequency - TransitionRoHS StatusMounting TypePackage / CasePackagingPart StatusMoisture Sensitivity Level (MSL)Power - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)View Compare
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RN4987FE,LF(CB16 WeeksSurface Mount2014100mW300mV100mA50V50V200MHzRoHS Compliant--------------- -
--2014-----200MHz-Surface Mount6-TSSOP, SC-88, SOT-363Tape & Reel (TR)Obsolete1 (Unlimited)200mW1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V100mA10k Ω47k Ω
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--2014-----200MHz-Surface Mount6-TSSOP, SC-88, SOT-363Tape & Reel (TR)Obsolete1 (Unlimited)200mW1 NPN, 1 PNP - Pre-Biased (Dual)80 @ 10mA 5V100nA ICBO300mV @ 250μA, 5mA50V100mA2.2k Ω47k Ω
-
16 WeeksSurface Mount2014100mW300mV100mA50V50V200MHzRoHS Compliant---Active----------
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