Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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Part Number: |
RN4987FE,LF(CB |
RN49A1(T5L,F,T) |
Manufacturer: |
Toshiba Semiconductor and Storage |
Toshiba Semiconductor and Storage |
Description: |
TRANS NPN/PNP PREBIAS 0.1W ES6 |
TRANS NPN/PNP PREBIAS 0.2W US6 |
Quantity Available: |
Available |
Available |
Datasheets: |
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Factory Lead Time |
16 Weeks |
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Mount |
Surface Mount |
- |
Published |
2014 |
2014 |
Power Dissipation-Max |
100mW |
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Collector Emitter Voltage (VCEO) |
300mV |
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Max Collector Current |
100mA |
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Collector Emitter Breakdown Voltage |
50V |
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Max Breakdown Voltage |
50V |
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Frequency - Transition |
200MHz |
200MHz |
RoHS Status |
RoHS Compliant |
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Mounting Type |
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Surface Mount |
Package / Case |
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6-TSSOP, SC-88, SOT-363 |
Packaging |
- |
Tape & Reel (TR) |
Part Status |
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Obsolete |
Moisture Sensitivity Level (MSL) |
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1 (Unlimited) |
Power - Max |
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200mW |
Transistor Type |
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1 NPN, 1 PNP - Pre-Biased (Dual) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
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80 @ 10mA 5V |
Current - Collector Cutoff (Max) |
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100nA ICBO |
Vce Saturation (Max) @ Ib, Ic |
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300mV @ 250μA, 5mA |
Voltage - Collector Emitter Breakdown (Max) |
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50V |
Current - Collector (Ic) (Max) |
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100mA |
Resistor - Base (R1) |
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2.2k Ω |
Resistor - Emitter Base (R2) |
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47k Ω |
Submit RFQ: |
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