| Product CompareMain parameters of the product comparison, the results for reference only, so that you choose a more suitable product! |
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| Part Number: |
MUN5211DW1T1G |
MUN5136DW1T1 |
| Manufacturer: |
ON Semiconductor |
ON Semiconductor |
| Description: |
TRANS 2NPN PREBIAS 0.25W SOT363 |
TRANS 2PNP PREBIAS 0.25W SOT363 |
| Quantity Available: |
Available |
Available |
| Datasheets: |
-
|
MUN51xxDW1T1 Series
|
| Lifecycle Status |
ACTIVE (Last Updated: 2 days ago) |
- |
| Factory Lead Time |
8 Weeks |
- |
| Contact Plating |
Tin |
- |
| Mounting Type |
Surface Mount |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
6-TSSOP, SC-88, SOT-363 |
| Surface Mount |
YES |
- |
| Number of Pins |
6 |
- |
| Packaging |
Cut Tape (CT) |
Tape & Reel (TR) |
| Published |
2005 |
2005 |
| JESD-609 Code |
e3 |
e0 |
| Pbfree Code |
yes |
- |
| Part Status |
Active |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
1 (Unlimited) |
| Number of Terminations |
6 |
6 |
| ECCN Code |
EAR99 |
EAR99 |
| Max Operating Temperature |
150°C |
- |
| Min Operating Temperature |
-55°C |
- |
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
BUILT-IN BIAS RESISTOR RATIO IS 1 |
| Subcategory |
BIP General Purpose Small Signal |
BIP General Purpose Small Signal |
| Voltage - Rated DC |
50V |
-50V |
| Max Power Dissipation |
250mW |
250mW |
| Terminal Form |
GULL WING |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
240 |
| Current Rating |
100mA |
-100mA |
| Time@Peak Reflow Temperature-Max (s) |
40 |
30 |
| Base Part Number |
MUN52**DW1T |
MUN51**DW1T |
| Pin Count |
6 |
6 |
| Max Output Current |
100mA |
- |
| Operating Supply Voltage |
50V |
- |
| Number of Elements |
2 |
2 |
| Polarity |
NPN |
- |
| Element Configuration |
Dual |
- |
| Power Dissipation |
187mW |
- |
| Transistor Application |
SWITCHING |
SWITCHING |
| Halogen Free |
Halogen Free |
- |
| Transistor Type |
2 NPN - Pre-Biased (Dual) |
2 PNP - Pre-Biased (Dual) |
| Collector Emitter Voltage (VCEO) |
50V |
250mV |
| Max Collector Current |
100mA |
100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
35 @ 5mA 10V |
80 @ 5mA 10V |
| Current - Collector Cutoff (Max) |
500nA |
500nA |
| Vce Saturation (Max) @ Ib, Ic |
250mV @ 300μA, 10mA |
250mV @ 300μA, 10mA |
| Collector Emitter Breakdown Voltage |
50V |
50V |
| Collector Emitter Saturation Voltage |
250mV |
- |
| Max Breakdown Voltage |
50V |
- |
| hFE Min |
35 |
- |
| Resistor - Base (R1) |
10k Ω |
100k Ω |
| Continuous Collector Current |
100mA |
- |
| Resistor - Emitter Base (R2) |
10k Ω |
100k Ω |
| Height |
900μm |
- |
| Length |
2mm |
- |
| Width |
1.25mm |
- |
| REACH SVHC |
No SVHC |
- |
| Radiation Hardening |
No |
- |
| RoHS Status |
ROHS3 Compliant |
Non-RoHS Compliant |
| Lead Free |
Lead Free |
Contains Lead |
| Mount |
- |
Surface Mount |
| Transistor Element Material |
- |
SILICON |
| Terminal Finish |
- |
Tin/Lead (Sn/Pb) |
| Reach Compliance Code |
- |
not_compliant |
| JESD-30 Code |
- |
R-PDSO-G6 |
| Qualification Status |
- |
Not Qualified |
| Configuration |
- |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max |
- |
250mW |
| Polarity/Channel Type |
- |
PNP |
| Submit RFQ: |
Submit |
Submit |
