Toshiba Semiconductor and Storage 1SS384TE85LF

Name: 1SS384TE85LF
Brand: Toshiba Semiconductor and Storage
SKU: 2821692-1SS384TE85LF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1SS384TE85LF

Manufacturer:: Toshiba Semiconductor and Storage

Ventron No:: 2821692-1SS384TE85LF

Description:: DIODE ARRAY SCHOTTKY 10V USQ

ECAD Model:

Datasheet:: 1SS384TE85LF

Specifications

Toshiba Semiconductor and Storage 1SS384TE85LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage 1SS384TE85LF.

Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-82
Number of Pins
82
Packaging
Cut Tape (CT)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
100°C
Min Operating Temperature
-40°C
Max Power Dissipation
100mW
Element Configuration
Dual
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
20μA @ 10V
Voltage - Forward (Vf) (Max) @ If
500mV @ 100mA
Forward Current
100mA
Operating Temperature - Junction
125°C Max
Forward Voltage
230mV
Max Reverse Voltage (DC)
10V
Average Rectified Current
100mA
Peak Reverse Current
20μA
Max Repetitive Reverse Voltage (Vrrm)
15V
Peak Non-Repetitive Surge Current
200mA
Diode Configuration
2 Independent
Max Forward Surge Current (Ifsm)
1A
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

1SS384TE85LF Overview
This device will operate when the forward voltage is set to 230mV.This device will operate when the forward voltage is set to 100mA.A reverse voltage peak of 20μA is used to power devices like this one.In this electronic or electrical device, the maximum amount of 100mW heat is generated (energy is wasted).

1SS384TE85LF Features
230mV forward voltage
a peak voltage of 20μA
a reverse voltage peak of 20μA

1SS384TE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
1SS384TE85LF applications of rectifier diode array.

Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification

Product Comparison

The three parts on the right have similar specifications to 1SS384TE85LF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Diode Configuration

Max Forward Surge Current (Ifsm)

Radiation Hardening

RoHS Status

Weight

Diode Element Material

Number of Terminations

ECCN Code

HTS Code

Terminal Position

Terminal Form

Reach Compliance Code

JESD-30 Code

Operating Temperature (Max)

Number of Elements

Power Dissipation-Max

Max Surge Current

Output Current-Max

Reverse Recovery Time

Reverse Voltage (DC)

Height

Length

Width

Subcategory

Base Part Number

Recovery Time

View Compare
1SS384TE85LF

Toshiba Semiconductor and Storage

11 Weeks

Surface Mount

Surface Mount

SC-82

82

Cut Tape (CT)

2014

Active

1 (Unlimited)

100°C

-40°C

100mW

Dual

Small Signal =< 200mA (Io), Any Speed

Schottky

20μA @ 10V

500mV @ 100mA

100mA

125°C Max

230mV

10V

100mA

20μA

15V

200mA

2 Independent

1A

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1SS300,LF

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

-

Tape & Reel (TR)

2014

Active

1 (Unlimited)

-

-

-

Common Anode

Small Signal =< 200mA (Io), Any Speed

Standard

500nA @ 80V

1.2V @ 100mA

300mA

125°C Max

1.2V

80V

100mA

-

-

-

1 Pair Common Anode

-

-

RoHS Compliant

6.208546mg

SILICON

3

EAR99

8541.10.00.70

DUAL

GULL WING

unknown

R-PDSO-G3

125°C

2

0.1W

2A

0.1A

4 ns

80V

900μm

2mm

1.25mm

-

-

-

1SS384TE85LF vs 1SS300,LF
1SS378(TE85L,F)

Toshiba Semiconductor and Storage

16 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

-

Cut Tape (CT)

2014

Active

1 (Unlimited)

100°C

-40°C

100mW

Common Cathode

Small Signal =< 200mA (Io), Any Speed

Schottky

20μA @ 10V

500mV @ 100mA

100mA

125°C Max

-

10V

100mA

-

15V

-

1 Pair Common Cathode

1A

-

RoHS Compliant

-

-

-

EAR99

8541.10.00.70

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Rectifier Diodes

-

-

1SS384TE85LF vs 1SS378(TE85L,F)
1SS361,LJ(CT

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

SC-75, SOT-416

3

Tape & Reel (TR)

2014

Active

1 (Unlimited)

125°C

-55°C

100mW

Common Cathode

Small Signal =< 200mA (Io), Any Speed

Standard

500nA @ 80V

1.2V @ 100mA

100mA

125°C Max

1.2V

80V

100mA

500nA

85V

2A

1 Pair Common Cathode

-

-

RoHS Compliant

-

SILICON

3

EAR99

8541.10.00.70

DUAL

GULL WING

unknown

-

-

2

-

2A

0.1A

4 ns

80V

-

-

-

-

1SS361

4 ns

1SS384TE85LF vs 1SS361,LJ(CT