GeneSiC Semiconductor 1N5831R
- Part Number:
- 1N5831R
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2430662-1N5831R
- Description:
- DIODE SCHOTTKY REV 35V DO4
- Datasheet:
- 1N5831R
GeneSiC Semiconductor 1N5831R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N5831R.
- Lifecycle StatusPRODUCTION (Last Updated: 5 months ago)
- Factory Lead Time10 Weeks
- MountChassis, Stud
- Mounting TypeChassis, Stud Mount
- Package / CaseDO-203AA, DO-4, Stud
- Diode Element MaterialSILICON
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations1
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Terminal PositionUPPER
- Terminal FormSOLDER LUG
- Base Part Number1N5831R
- JESD-30 CodeO-MUPM-D1
- Number of Elements1
- ConfigurationSINGLE
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky, Reverse Polarity
- Current - Reverse Leakage @ Vr2mA @ 20V
- Voltage - Forward (Vf) (Max) @ If580mV @ 25A
- Case ConnectionANODE
- Forward Current25A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current400A
- ApplicationPOWER
- Max Reverse Voltage (DC)35V
- Average Rectified Current25A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)35V
- Natural Thermal Resistance1.8 °C/W
- RoHS StatusRoHS Compliant
1N5831R Overview
In this device, the maximum reverse leakage current is 1μA volts.The average rectified current for this device is 25A volts.When the forward current reaches 25A, it is allowed.Objects and materials resist heat flow by their thermal resistance, and their natural thermal resistance is 1.8 °C/W.The maximum surge current is 400A.A data chart shows that the peak reverse is 1A in the datasheets.
1N5831R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 25A volts
the peak reverse is 1A
1N5831R Applications
There are a lot of GeneSiC Semiconductor
1N5831R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
In this device, the maximum reverse leakage current is 1μA volts.The average rectified current for this device is 25A volts.When the forward current reaches 25A, it is allowed.Objects and materials resist heat flow by their thermal resistance, and their natural thermal resistance is 1.8 °C/W.The maximum surge current is 400A.A data chart shows that the peak reverse is 1A in the datasheets.
1N5831R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 25A volts
the peak reverse is 1A
1N5831R Applications
There are a lot of GeneSiC Semiconductor
1N5831R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5831R More Descriptions
35V 25A DO-4 Silicon Stud Rectifier - Schottky (Reverse Configuration)
Schottky Diodes & Rectifiers 35V - 25A Schottky Rectifier
DIODE SCHOTTKY REV 35V 25A DO4
Schottky Rectifier, 35V, 25A, Do-203Aa; Repetitive Peak Reverse Voltage:35V; Average Forward Current:25A; Forward Voltage Max:580Mv; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Diode Mounting:Stud Rohs Compliant: Yes |Genesic Semiconductor 1N5831R
Schottky Diodes & Rectifiers 35V - 25A Schottky Rectifier
DIODE SCHOTTKY REV 35V 25A DO4
Schottky Rectifier, 35V, 25A, Do-203Aa; Repetitive Peak Reverse Voltage:35V; Average Forward Current:25A; Forward Voltage Max:580Mv; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Diode Mounting:Stud Rohs Compliant: Yes |Genesic Semiconductor 1N5831R
The three parts on the right have similar specifications to 1N5831R.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureTerminal PositionTerminal FormBase Part NumberJESD-30 CodeNumber of ElementsConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentApplicationMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Natural Thermal ResistanceRoHS StatusVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io):Capacitance @ Vr, F:Contact PlatingNumber of PinsWeightJESD-609 CodeECCN CodeAdditional FeatureHTS CodeSubcategoryPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusElement ConfigurationOutput Current-MaxForward VoltagePeak Non-Repetitive Surge CurrentMax Forward Surge Current (Ifsm)HeightLengthWidthLead FreeTerminal FinishCapacitanceVoltage - Rated DCCurrent RatingPolarityOutput CurrentView Compare
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1N5831RPRODUCTION (Last Updated: 5 months ago)10 WeeksChassis, StudChassis, Stud MountDO-203AA, DO-4, StudSILICONBulk2013yesActive1 (Unlimited)1150°C-55°CUPPERSOLDER LUG1N5831RO-MUPM-D11SINGLEFast Recovery =< 500ns, > 200mA (Io)Schottky, Reverse Polarity2mA @ 20V580mV @ 25AANODE25A1μA-55°C~150°C400APOWER35V25A11A35V1.8 °C/WRoHS Compliant------------------------------------------
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-------------------------------------450mV @ 1A20VDO-41Fast Recovery = 200mA (Io)-Tape & Reel (TR)DO-204AL, DO-41, Axial150°C (Max)Through HoleSchottky500µA @ 20V1A-----------------------------
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-8 WeeksThrough HoleThrough HoleDO-201AD, AxialSILICONBulk2006noObsolete1 (Unlimited)2150°C-65°C-WIRE1N5820-1-Fast Recovery =< 500ns, > 200mA (Io)Schottky2mA @ 20V475mV @ 3AISOLATED3A--65°C~150°C-EFFICIENCY20V3A12mA20V40 °C/WROHS3 Compliant-------------Tin21.09999ge3EAR99FREE WHEELING DIODE, LOW POWER LOSS8541.10.00.80Rectifier Diodes260not_compliant402Not QualifiedSingle3A850mV80A80A5.3mm9.5mm5.3mmLead Free------
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--Through HoleThrough HoleDO-204AL, DO-41, AxialSILICONTape & Reel (TR)2012-ObsoleteNot Applicable2---WIRE1N5818-1SINGLEFast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 30V550mV @ 1AISOLATED---65°C~125°C--30V1A----Non-RoHS Compliant--------------2-e0EAR99FREE WHEELING DIODE8541.10.00.80-NOT SPECIFIEDunknownNOT SPECIFIED2Not Qualified--------Contains LeadTIN LEAD110pF30V1AStandard1A
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