1N5830R

GeneSiC Semiconductor 1N5830R

Part Number:
1N5830R
Manufacturer:
GeneSiC Semiconductor
Ventron No:
3552403-1N5830R
Description:
DIODE SCHOTTKY REV 25V DO4
ECAD Model:
Datasheet:
1N5830R

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Specifications
GeneSiC Semiconductor 1N5830R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N5830R.
  • Lifecycle Status
    PRODUCTION (Last Updated: 5 months ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Chassis, Stud
  • Mounting Type
    Chassis, Stud Mount
  • Package / Case
    DO-203AA, DO-4, Stud
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    1
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    SOLDER LUG
  • Base Part Number
    1N5830R
  • JESD-30 Code
    O-MUPM-D1
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky, Reverse Polarity
  • Current - Reverse Leakage @ Vr
    2mA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    580mV @ 25A
  • Case Connection
    ANODE
  • Forward Current
    25A
  • Max Reverse Leakage Current
    1μA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    400A
  • Application
    POWER
  • Max Reverse Voltage (DC)
    25V
  • Average Rectified Current
    25A
  • Number of Phases
    1
  • Peak Reverse Current
    1A
  • Max Repetitive Reverse Voltage (Vrrm)
    25V
  • Natural Thermal Resistance
    1.8 °C/W
  • RoHS Status
    RoHS Compliant
Description
1N5830R Overview
A maximum reverse leakage current of 1μA volts is produced by this device.This device has an average rectified current of 25A volts.Forward current is allowed to reach a value of zero.An object's thermal resistance is a measure of its ability to resist a heat flow, and its natural thermal resistance is 1.8 °C/W °C.Surge currents can be used up to 400A.Datasheets indicate that the peak reverse is 1A.

1N5830R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 25A volts
the peak reverse is 1A


1N5830R Applications
There are a lot of GeneSiC Semiconductor
1N5830R applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5830R More Descriptions
25V 25A DO-4 Silicon Stud Rectifier - Schottky (Reverse Configuration)
DIODE SCHOTTKY REV 25V 25A DO4
Schottky Rectifier, 25V, 25A, Do-203Aa; Repetitive Peak Reverse Voltage:25V; Average Forward Current:25A; Forward Voltage Max:580Mv; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Diode Mounting:Stud Rohs Compliant: Yes |Genesic Semiconductor 1N5830R
Product Comparison
The three parts on the right have similar specifications to 1N5830R.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Terminal Position
    Terminal Form
    Base Part Number
    JESD-30 Code
    Number of Elements
    Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Max Reverse Leakage Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Natural Thermal Resistance
    RoHS Status
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io):
    Capacitance @ Vr, F:
    Number of Pins
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Capacitance
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Polarity
    Output Current
    Lead Free
    View Compare
  • 1N5830R
    1N5830R
    PRODUCTION (Last Updated: 5 months ago)
    10 Weeks
    Chassis, Stud
    Chassis, Stud Mount
    DO-203AA, DO-4, Stud
    SILICON
    Bulk
    2013
    yes
    Active
    1 (Unlimited)
    1
    EAR99
    150°C
    -55°C
    8541.10.00.80
    UPPER
    SOLDER LUG
    1N5830R
    O-MUPM-D1
    1
    SINGLE
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky, Reverse Polarity
    2mA @ 20V
    580mV @ 25A
    ANODE
    25A
    1μA
    -55°C~150°C
    400A
    POWER
    25V
    25A
    1
    1A
    25V
    1.8 °C/W
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N5817RL
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    450mV @ 1A
    20V
    DO-41
    Fast Recovery = 200mA (Io)
    -
    Tape & Reel (TR)
    DO-204AL, DO-41, Axial
    150°C (Max)
    Through Hole
    Schottky
    500µA @ 20V
    1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N5822RL
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    525mV @ 3A
    40V
    DO-201AD
    Fast Recovery = 200mA (Io)
    -
    Tape & Reel (TR)
    DO-201AA, DO-27, Axial
    -65°C ~ 125°C
    Through Hole
    Schottky
    2mA @ 40V
    3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N5818/54
    -
    -
    Through Hole
    Through Hole
    DO-204AL, DO-41, Axial
    SILICON
    Tape & Reel (TR)
    2012
    -
    Obsolete
    Not Applicable
    2
    EAR99
    -
    -
    8541.10.00.80
    -
    WIRE
    1N5818
    -
    1
    SINGLE
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 30V
    550mV @ 1A
    ISOLATED
    -
    -
    -65°C~125°C
    -
    -
    30V
    1A
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2
    e0
    TIN LEAD
    FREE WHEELING DIODE
    110pF
    30V
    NOT SPECIFIED
    unknown
    1A
    NOT SPECIFIED
    2
    Not Qualified
    Standard
    1A
    Contains Lead
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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