GeneSiC Semiconductor 1N5830R
- Part Number:
- 1N5830R
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 3552403-1N5830R
- Description:
- DIODE SCHOTTKY REV 25V DO4
- Datasheet:
- 1N5830R
GeneSiC Semiconductor 1N5830R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N5830R.
- Lifecycle StatusPRODUCTION (Last Updated: 5 months ago)
- Factory Lead Time10 Weeks
- MountChassis, Stud
- Mounting TypeChassis, Stud Mount
- Package / CaseDO-203AA, DO-4, Stud
- Diode Element MaterialSILICON
- PackagingBulk
- Published2013
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations1
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormSOLDER LUG
- Base Part Number1N5830R
- JESD-30 CodeO-MUPM-D1
- Number of Elements1
- ConfigurationSINGLE
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky, Reverse Polarity
- Current - Reverse Leakage @ Vr2mA @ 20V
- Voltage - Forward (Vf) (Max) @ If580mV @ 25A
- Case ConnectionANODE
- Forward Current25A
- Max Reverse Leakage Current1μA
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current400A
- ApplicationPOWER
- Max Reverse Voltage (DC)25V
- Average Rectified Current25A
- Number of Phases1
- Peak Reverse Current1A
- Max Repetitive Reverse Voltage (Vrrm)25V
- Natural Thermal Resistance1.8 °C/W
- RoHS StatusRoHS Compliant
1N5830R Overview
A maximum reverse leakage current of 1μA volts is produced by this device.This device has an average rectified current of 25A volts.Forward current is allowed to reach a value of zero.An object's thermal resistance is a measure of its ability to resist a heat flow, and its natural thermal resistance is 1.8 °C/W °C.Surge currents can be used up to 400A.Datasheets indicate that the peak reverse is 1A.
1N5830R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 25A volts
the peak reverse is 1A
1N5830R Applications
There are a lot of GeneSiC Semiconductor
1N5830R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
A maximum reverse leakage current of 1μA volts is produced by this device.This device has an average rectified current of 25A volts.Forward current is allowed to reach a value of zero.An object's thermal resistance is a measure of its ability to resist a heat flow, and its natural thermal resistance is 1.8 °C/W °C.Surge currents can be used up to 400A.Datasheets indicate that the peak reverse is 1A.
1N5830R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 25A volts
the peak reverse is 1A
1N5830R Applications
There are a lot of GeneSiC Semiconductor
1N5830R applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5830R More Descriptions
25V 25A DO-4 Silicon Stud Rectifier - Schottky (Reverse Configuration)
DIODE SCHOTTKY REV 25V 25A DO4
Schottky Rectifier, 25V, 25A, Do-203Aa; Repetitive Peak Reverse Voltage:25V; Average Forward Current:25A; Forward Voltage Max:580Mv; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Diode Mounting:Stud Rohs Compliant: Yes |Genesic Semiconductor 1N5830R
DIODE SCHOTTKY REV 25V 25A DO4
Schottky Rectifier, 25V, 25A, Do-203Aa; Repetitive Peak Reverse Voltage:25V; Average Forward Current:25A; Forward Voltage Max:580Mv; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Diode Mounting:Stud Rohs Compliant: Yes |Genesic Semiconductor 1N5830R
The three parts on the right have similar specifications to 1N5830R.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureHTS CodeTerminal PositionTerminal FormBase Part NumberJESD-30 CodeNumber of ElementsConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentMax Reverse Leakage CurrentOperating Temperature - JunctionMax Surge CurrentApplicationMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Natural Thermal ResistanceRoHS StatusVoltage - Forward (Vf) (Max) @ If:Voltage - DC Reverse (Vr) (Max):Supplier Device Package:Speed:Series:Packaging:Package / Case:Operating Temperature - Junction:Mounting Type:Diode Type:Current - Reverse Leakage @ Vr:Current - Average Rectified (Io):Capacitance @ Vr, F:Number of PinsJESD-609 CodeTerminal FinishAdditional FeatureCapacitanceVoltage - Rated DCPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusPolarityOutput CurrentLead FreeView Compare
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1N5830RPRODUCTION (Last Updated: 5 months ago)10 WeeksChassis, StudChassis, Stud MountDO-203AA, DO-4, StudSILICONBulk2013yesActive1 (Unlimited)1EAR99150°C-55°C8541.10.00.80UPPERSOLDER LUG1N5830RO-MUPM-D11SINGLEFast Recovery =< 500ns, > 200mA (Io)Schottky, Reverse Polarity2mA @ 20V580mV @ 25AANODE25A1μA-55°C~150°C400APOWER25V25A11A25V1.8 °C/WRoHS Compliant-----------------------------
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---------------------------------------450mV @ 1A20VDO-41Fast Recovery = 200mA (Io)-Tape & Reel (TR)DO-204AL, DO-41, Axial150°C (Max)Through HoleSchottky500µA @ 20V1A----------------
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---------------------------------------525mV @ 3A40VDO-201ADFast Recovery = 200mA (Io)-Tape & Reel (TR)DO-201AA, DO-27, Axial-65°C ~ 125°CThrough HoleSchottky2mA @ 40V3A----------------
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--Through HoleThrough HoleDO-204AL, DO-41, AxialSILICONTape & Reel (TR)2012-ObsoleteNot Applicable2EAR99--8541.10.00.80-WIRE1N5818-1SINGLEFast Recovery =< 500ns, > 200mA (Io)Schottky1mA @ 30V550mV @ 1AISOLATED---65°C~125°C--30V1A----Non-RoHS Compliant-------------2e0TIN LEADFREE WHEELING DIODE110pF30VNOT SPECIFIEDunknown1ANOT SPECIFIED2Not QualifiedStandard1AContains Lead
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