GeneSiC Semiconductor 1N5829R

Name: 1N5829R
Brand: GeneSiC Semiconductor
SKU: 2430601-1N5829R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N5829R

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2430601-1N5829R

Description:: DIODE SCHOTTKY REV 20V DO4

ECAD Model:

Datasheet:: 1N5829R

Part Pictures

Specifications

GeneSiC Semiconductor 1N5829R technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N5829R.

Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time
10 Weeks
Mount
Chassis, Stud
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AA, DO-4, Stud
Diode Element Material
SILICON
Packaging
Bulk
Published
2013
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
1
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Terminal Position
UPPER
Terminal Form
SOLDER LUG
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
1N5829R
JESD-30 Code
O-MUPM-D1
Number of Elements
1
Configuration
SINGLE
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr
2mA @ 20V
Voltage - Forward (Vf) (Max) @ If
580mV @ 25A
Case Connection
ANODE
Forward Current
25A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Max Surge Current
400A
Application
POWER
Max Reverse Voltage (DC)
20V
Average Rectified Current
25A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
20V
Natural Thermal Resistance
1.8 °C/W
RoHS Status
RoHS Compliant

Description

1N5829R Overview
This device produces a maximal reverse leakage current of 1μA volts.There is an average rectified current of 25A volts for this device.The allowable value of forward current reaches 25A.Thermal resistance is a heat property and a measurement of a temperature difference by which an object or material resists a heat flow, and its natural thermal resistance is 1.8 °C/W.400A is the maximum value of surge current that can be used.In the datasheets, the peak reverse is 1A, as indicated by the data chart.

1N5829R Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 25A volts
the peak reverse is 1A

1N5829R Applications
There are a lot of GeneSiC Semiconductor
1N5829R applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N5829R More Descriptions

20V 25A DO-4 Silicon Stud Rectifier - Schottky (Reverse Configuration)
Schottky Diodes & Rectifiers 20V - 25A Schottky Rectifier
DIODE SCHOTTKY REV 20V 25A DO4
Schottky Rectifier, 20V, 25A, Do-203Aa; Repetitive Peak Reverse Voltage:20V; Average Forward Current:25A; Forward Voltage Max:580Mv; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Diode Mounting:Stud Rohs Compliant: Yes |Genesic Semiconductor 1N5829R

Product Comparison

The three parts on the right have similar specifications to 1N5829R.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Application

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Natural Thermal Resistance

RoHS Status

Contact Plating

Number of Pins

Weight

JESD-609 Code

ECCN Code

Additional Feature

HTS Code

Subcategory

Reach Compliance Code

Pin Count

Qualification Status

Element Configuration

Output Current-Max

Forward Voltage

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Length

Width

Lead Free

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

Terminal Finish

Capacitance

Voltage - Rated DC

Current Rating

Polarity

Output Current

View Compare
1N5829R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

10 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

SILICON

Bulk

2013

yes

Active

1 (Unlimited)

1

150°C

-55°C

UPPER

SOLDER LUG

NOT SPECIFIED

NOT SPECIFIED

1N5829R

O-MUPM-D1

1

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Schottky, Reverse Polarity

2mA @ 20V

580mV @ 25A

ANODE

25A

1μA

-55°C~150°C

400A

POWER

20V

25A

1

1A

20V

1.8 °C/W

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N5820-B

Diodes Incorporated

-

8 Weeks

Through Hole

Through Hole

DO-201AD, Axial

SILICON

Bulk

2006

no

Obsolete

1 (Unlimited)

2

150°C

-65°C

-

WIRE

260

40

1N5820

-

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

2mA @ 20V

475mV @ 3A

ISOLATED

3A

-

-65°C~150°C

-

EFFICIENCY

20V

3A

1

2mA

20V

40 °C/W

ROHS3 Compliant

Tin

2

1.09999g

e3

EAR99

FREE WHEELING DIODE, LOW POWER LOSS

8541.10.00.80

Rectifier Diodes

not_compliant

2

Not Qualified

Single

3A

850mV

80A

80A

5.3mm

9.5mm

5.3mm

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1N5829R vs 1N5820-B
1N5822RL

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

525mV @ 3A

40V

DO-201AD

Fast Recovery = 200mA (Io)

-

Tape & Reel (TR)

DO-201AA, DO-27, Axial

-65°C ~ 125°C

Through Hole

Schottky

2mA @ 40V

3A

-

-

-

-

-

-

-

1N5829R vs 1N5822RL
1N5818/54

Vishay Semiconductor Diodes Division

-

-

Through Hole

Through Hole

DO-204AL, DO-41, Axial

SILICON

Tape & Reel (TR)

2012

-

Obsolete

Not Applicable

2

-

-

-

WIRE

NOT SPECIFIED

NOT SPECIFIED

1N5818

-

1

SINGLE

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 30V

550mV @ 1A

ISOLATED

-

-

-65°C~125°C

-

-

30V

1A

-

-

-

-

Non-RoHS Compliant

-

2

-

e0

EAR99

FREE WHEELING DIODE

8541.10.00.80

-

unknown

2

Not Qualified

-

-

-

-

-

-

-

-

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

TIN LEAD

110pF

30V

1A

Standard

1A

1N5829R vs 1N5818/54