ON Semiconductor 1N5821G

Name: 1N5821G
Brand: ON Semiconductor
SKU: 2421558-1N5821G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N5821G

Manufacturer:: ON Semiconductor

Ventron No:: 2421558-1N5821G

Description:: DIODE SCHOTTKY 30V 3A DO201AD

ECAD Model:

Datasheet:: 1N5821G

Specifications

ON Semiconductor 1N5821G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 1N5821G.

Lifecycle Status
ACTIVE (Last Updated: 19 hours ago)
Factory Lead Time
14 Weeks
Mounting Type
Through Hole
Package / Case
DO-201AA, DO-27, Axial
Number of Pins
2
Supplier Device Package
DO-201AD
Weight
4.535924g
Packaging
Bulk
Published
2000
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
Voltage - Rated DC
30V
Current Rating
3A
Base Part Number
1N5821
Polarity
Standard
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
2mA @ 30V
Output Current
3A
Voltage - Forward (Vf) (Max) @ If
500mV @ 3A
Forward Current
3A
Max Reverse Leakage Current
2mA
Operating Temperature - Junction
-65°C~125°C
Max Surge Current
80A
Halogen Free
Halogen Free
Voltage - DC Reverse (Vr) (Max)
30V
Breakdown Voltage
30V
Current - Average Rectified (Io)
3A
Forward Voltage
500mV
Max Reverse Voltage (DC)
30V
Average Rectified Current
3A
Peak Reverse Current
2mA
Max Repetitive Reverse Voltage (Vrrm)
30V
Peak Non-Repetitive Surge Current
80A
Max Forward Surge Current (Ifsm)
80A
Diameter
5.3mm
Height
9.5mm
Length
9.4996mm
Width
5.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

1N5821G Overview
Phase diode rectifier produces a maximum reverse leakage current of 2mA volts.As a result, this device has a rectified current of 3A volts on average.Phase diode rectifier is permissible for forward current to reach 3A.Fuse elements have an indefinite life expectancy of 3A, which is the maximum current that the fuse can carry for an indefinite period of time.There is no maximum value for 80A surge current.Based on the data charts in the datasheets, the peak reverse is 2mA.Diodes have a breakdown voltage 30V, which is the maximum reverse voltage that can be applied without causing an exponential increase in their leakage current.

1N5821G Features
a maximal reverse leakage current of 2mA volts
an average rectified current of 3A volts
a current rating of 3A
the peak reverse is 2mA
the breakdown voltage of a diode is 30V

1N5821G Applications
There are a lot of ON Semiconductor
1N5821G applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N5821G More Descriptions

ON Semi 1N5821G, Schottky Diode, 30V 3A, 2-Pin DO-201AD | ON Semiconductor 1N5821G
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD
1N5821 Series 3 A 30 V Schottky Axial Lead Rectifier - DO-201AD
Diode 1N5821 Schottky 30 Volt 3 Amp
Schottky Barrier Rectifier, 3.0 A, 30 V
SCHOTTKY RECT, 3A, 30V, AXIAL; Repetitive Reverse Voltage Vrrm Max: 30V; Forward Current If(AV): 3A; Diode Configuration: Single; Diode Case Style: Axial Leaded; No; Available until stocks are exhausted Alternative available

Product Comparison

The three parts on the right have similar specifications to 1N5821G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Base Part Number

Polarity

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Output Current

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Halogen Free

Voltage - DC Reverse (Vr) (Max)

Breakdown Voltage

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Diameter

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Mount

Diode Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Case Connection

Output Current-Max

Application

Number of Phases

Natural Thermal Resistance

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

Terminal Finish

Capacitance

Configuration

View Compare
1N5821G

ON Semiconductor

ACTIVE (Last Updated: 19 hours ago)

14 Weeks

Through Hole

DO-201AA, DO-27, Axial

2

DO-201AD

4.535924g

Bulk

2000

Active

1 (Unlimited)

125°C

-65°C

30V

3A

1N5821

Standard

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

2mA @ 30V

3A

500mV @ 3A

3A

2mA

-65°C~125°C

80A

Halogen Free

30V

30V

3A

500mV

30V

3A

2mA

30V

80A

80A

5.3mm

9.5mm

9.4996mm

5.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N5820-B

Diodes Incorporated

-

8 Weeks

Through Hole

DO-201AD, Axial

2

-

1.09999g

Bulk

2006

Obsolete

1 (Unlimited)

150°C

-65°C

-

-

1N5820

-

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

2mA @ 20V

-

475mV @ 3A

3A

-

-65°C~150°C

-

-

-

-

-

850mV

20V

3A

2mA

20V

80A

80A

-

5.3mm

9.5mm

5.3mm

-

-

ROHS3 Compliant

Lead Free

Tin

Through Hole

SILICON

e3

no

2

EAR99

FREE WHEELING DIODE, LOW POWER LOSS

8541.10.00.80

Rectifier Diodes

WIRE

260

not_compliant

40

2

Not Qualified

1

ISOLATED

3A

EFFICIENCY

1

40 °C/W

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1N5821G vs 1N5820-B
1N5822RL

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

525mV @ 3A

40V

DO-201AD

Fast Recovery = 200mA (Io)

-

Tape & Reel (TR)

DO-201AA, DO-27, Axial

-65°C ~ 125°C

Through Hole

Schottky

2mA @ 40V

3A

-

-

-

-

1N5821G vs 1N5822RL
1N5818/54

Vishay Semiconductor Diodes Division

-

-

Through Hole

DO-204AL, DO-41, Axial

2

-

-

Tape & Reel (TR)

2012

Obsolete

Not Applicable

-

-

30V

1A

1N5818

Standard

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 30V

1A

550mV @ 1A

-

-

-65°C~125°C

-

-

-

-

-

-

30V

1A

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

Through Hole

SILICON

e0

-

2

EAR99

FREE WHEELING DIODE

8541.10.00.80

-

WIRE

NOT SPECIFIED

unknown

NOT SPECIFIED

2

Not Qualified

1

ISOLATED

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

TIN LEAD

110pF

SINGLE

1N5821G vs 1N5818/54