1N5820US

Microsemi Corporation 1N5820US

Part Number:
1N5820US
Manufacturer:
Microsemi Corporation
Ventron No:
3582199-1N5820US
Description:
DIODE SCHOTTKY 20V 3A B-MELF
ECAD Model:
Datasheet:
1N5820US

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Specifications
Microsemi Corporation 1N5820US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5820US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, B
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • Max Operating Temperature
    125°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    METALLURGICALLY BONDED
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    100μA @ 20V
  • Voltage - Forward (Vf) (Max) @ If
    500mV @ 3A
  • Case Connection
    ISOLATED
  • Forward Current
    3A
  • Operating Temperature - Junction
    -65°C~125°C
  • Output Current-Max
    3A
  • Application
    GENERAL PURPOSE
  • Forward Voltage
    700mV
  • Max Reverse Voltage (DC)
    20V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Peak Reverse Current
    100μA
  • Max Repetitive Reverse Voltage (Vrrm)
    20V
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
1N5820US Overview
A rectified current of 3A volts is averaged for this device.A value of 3A is the maximum forward current that can be allowed.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 3A.As indicated by the data chart in the datasheets, the peak reverse is 100μA.

1N5820US Features
an average rectified current of 3A volts
3A is the maximum value
the peak reverse is 100μA


1N5820US Applications
There are a lot of Microsemi Corporation
1N5820US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5820US More Descriptions
Rectifier Diode Schottky 20V 3A 2-Pin E-MELF Bag
Small-Signal Schottky _ D-5B
DIODE GEN PURP 50V 3A B-MELF
Product Comparison
The three parts on the right have similar specifications to 1N5820US.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Output Current-Max
    Application
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Radiation Hardening
    RoHS Status
    Contact Plating
    Weight
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Qualification Status
    Peak Non-Repetitive Surge Current
    Max Forward Surge Current (Ifsm)
    Natural Thermal Resistance
    Height
    Length
    Width
    Lead Free
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io):
    Capacitance @ Vr, F:
    Capacitance
    Voltage - Rated DC
    Current Rating
    Polarity
    Configuration
    Output Current
    View Compare
  • 1N5820US
    1N5820US
    IN PRODUCTION (Last Updated: 3 weeks ago)
    10 Weeks
    Surface Mount
    Surface Mount
    SQ-MELF, B
    2
    SILICON
    Bulk
    1997
    e0
    no
    Discontinued
    1 (Unlimited)
    2
    EAR99
    TIN LEAD
    125°C
    -65°C
    METALLURGICALLY BONDED
    8541.10.00.80
    Rectifier Diodes
    END
    WRAP AROUND
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    100μA @ 20V
    500mV @ 3A
    ISOLATED
    3A
    -65°C~125°C
    3A
    GENERAL PURPOSE
    700mV
    20V
    3A
    1
    100μA
    20V
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N5820-B
    -
    8 Weeks
    Through Hole
    Through Hole
    DO-201AD, Axial
    2
    SILICON
    Bulk
    2006
    e3
    no
    Obsolete
    1 (Unlimited)
    2
    EAR99
    -
    150°C
    -65°C
    FREE WHEELING DIODE, LOW POWER LOSS
    8541.10.00.80
    Rectifier Diodes
    -
    WIRE
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    2mA @ 20V
    475mV @ 3A
    ISOLATED
    3A
    -65°C~150°C
    3A
    EFFICIENCY
    850mV
    20V
    3A
    1
    2mA
    20V
    -
    ROHS3 Compliant
    Tin
    1.09999g
    260
    not_compliant
    40
    1N5820
    Not Qualified
    80A
    80A
    40 °C/W
    5.3mm
    9.5mm
    5.3mm
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 1N5822RL
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    525mV @ 3A
    40V
    DO-201AD
    Fast Recovery = 200mA (Io)
    -
    Tape & Reel (TR)
    DO-201AA, DO-27, Axial
    -65°C ~ 125°C
    Through Hole
    Schottky
    2mA @ 40V
    3A
    -
    -
    -
    -
    -
    -
    -
  • 1N5818/54
    -
    -
    Through Hole
    Through Hole
    DO-204AL, DO-41, Axial
    2
    SILICON
    Tape & Reel (TR)
    2012
    e0
    -
    Obsolete
    Not Applicable
    2
    EAR99
    TIN LEAD
    -
    -
    FREE WHEELING DIODE
    8541.10.00.80
    -
    -
    WIRE
    2
    1
    -
    Fast Recovery =< 500ns, > 200mA (Io)
    Schottky
    1mA @ 30V
    550mV @ 1A
    ISOLATED
    -
    -65°C~125°C
    -
    -
    -
    30V
    1A
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    1N5818
    Not Qualified
    -
    -
    -
    -
    -
    -
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    110pF
    30V
    1A
    Standard
    SINGLE
    1A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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