Microsemi Corporation 1N5804

Name: 1N5804
Brand: Microsemi Corporation
SKU: 2422503-1N5804
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N5804

Manufacturer:: Microsemi Corporation

Ventron No:: 2422503-1N5804

Description:: DIODE GEN PURP 100V 1A AXIAL

ECAD Model:

Datasheet:: 1N5804

Part Pictures

Specifications

Microsemi Corporation 1N5804 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5804.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
A, Axial
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
1997
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
HTS Code
8541.10.00.80
Technology
AVALANCHE
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
MIL-19500
Qualification Status
Qualified
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
1μA @ 100V
Voltage - Forward (Vf) (Max) @ If
875mV @ 1A
Case Connection
ISOLATED
Forward Current
2.5A
Operating Temperature - Junction
-65°C~175°C
Output Current-Max
1A
Forward Voltage
975mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
1A
Number of Phases
1
Reverse Recovery Time
25 ns
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Capacitance @ Vr, F
25pF @ 10V 1MHz
Peak Non-Repetitive Surge Current
35A
Radiation Hardening
Yes
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

1N5804 Overview
The average rectified current for this device is 1A volts.When the forward current reaches 2.5A, it is allowed.As far as output current is concerned, 1A is the maximum.A data chart shows that the peak reverse is 1μA in the datasheets.

1N5804 Features
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 1μA

1N5804 Applications
There are a lot of Microsemi Corporation
1N5804 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N5804 More Descriptions

DIODE GEN PURP 100V 1A AXIAL / MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP
Rectifier Diode Switching 100V 2.5A 25ns 2-Pin Case A Bag
1N5804 Series 100 V 1 A Through Hole Ultrafast Recovery Glass Rectifier
STANDARD RECOVERY DIODE AND RECTIFIER
ULTRA FAST RECTIFIER (LESS SUBMINIATURE CONNECTOR, SOUltra Fast Rectifier (less than 100ns)
ZRECTM 10A 1200V SIC SCHOTTKY DI

Product Comparison

The three parts on the right have similar specifications to 1N5804.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Reference Standard

Qualification Status

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Output Current-Max

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

Weight

Subcategory

Base Part Number

Pin Count

Application

Max Forward Surge Current (Ifsm)

Natural Thermal Resistance

Height

Length

Width

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

Capacitance

Voltage - Rated DC

Current Rating

Polarity

Configuration

Output Current

View Compare
1N5804

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

7 Weeks

Through Hole

Through Hole

A, Axial

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

175°C

-65°C

HIGH RELIABILITY

8541.10.00.80

AVALANCHE

WIRE

NOT SPECIFIED

not_compliant

NOT SPECIFIED

MIL-19500

Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

1μA @ 100V

875mV @ 1A

ISOLATED

2.5A

-65°C~175°C

1A

975mV

100V

1A

1

25 ns

1μA

100V

25pF @ 10V 1MHz

35A

Yes

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N5820-B

Diodes Incorporated

-

8 Weeks

Through Hole

Through Hole

DO-201AD, Axial

2

SILICON

Bulk

2006

e3

no

Obsolete

1 (Unlimited)

2

EAR99

-

150°C

-65°C

FREE WHEELING DIODE, LOW POWER LOSS

8541.10.00.80

-

WIRE

260

not_compliant

40

-

Not Qualified

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

2mA @ 20V

475mV @ 3A

ISOLATED

3A

-65°C~150°C

3A

850mV

20V

3A

1

-

2mA

20V

-

80A

-

ROHS3 Compliant

Lead Free

Tin

1.09999g

Rectifier Diodes

1N5820

2

EFFICIENCY

80A

40 °C/W

5.3mm

9.5mm

5.3mm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1N5804 vs 1N5820-B
1N5822RL

ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

525mV @ 3A

40V

DO-201AD

Fast Recovery = 200mA (Io)

-

Tape & Reel (TR)

DO-201AA, DO-27, Axial

-65°C ~ 125°C

Through Hole

Schottky

2mA @ 40V

3A

-

-

-

-

-

-

-

1N5804 vs 1N5822RL
1N5818/54

Vishay Semiconductor Diodes Division

-

-

Through Hole

Through Hole

DO-204AL, DO-41, Axial

2

SILICON

Tape & Reel (TR)

2012

e0

-

Obsolete

Not Applicable

2

EAR99

TIN LEAD

-

-

FREE WHEELING DIODE

8541.10.00.80

-

WIRE

NOT SPECIFIED

unknown

NOT SPECIFIED

-

Not Qualified

1

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1mA @ 30V

550mV @ 1A

ISOLATED

-

-65°C~125°C

-

-

30V

1A

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

1N5818

2

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

110pF

30V

1A

Standard

SINGLE

1A

1N5804 vs 1N5818/54