Microsemi Corporation 1N5551US
- Part Number:
- 1N5551US
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2423667-1N5551US
- Description:
- DIODE GEN PURP 400V 3A D5B
- Datasheet:
- 1N5551US
Microsemi Corporation 1N5551US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5551US.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time7 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSQ-MELF, B
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- Published1997
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Additional FeatureHIGH RELIABILITY
- HTS Code8541.10.00.80
- TechnologyAVALANCHE
- Terminal PositionEND
- Terminal FormWRAP AROUND
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- SpeedStandard Recovery >500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr1μA @ 400V
- Voltage - Forward (Vf) (Max) @ If1.2V @ 9A
- Case ConnectionISOLATED
- Forward Current5A
- Operating Temperature - Junction-65°C~175°C
- Output Current-Max5A
- ApplicationPOWER
- Forward Voltage1.2V
- Max Reverse Voltage (DC)400V
- Average Rectified Current3A
- Number of Phases1
- Reverse Recovery Time2 μs
- Peak Reverse Current1μA
- Max Repetitive Reverse Voltage (Vrrm)400V
- Peak Non-Repetitive Surge Current100A
- Radiation HardeningYes
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
1N5551US Overview
There is an average rectified current of 3A volts for this device.The allowable value of forward current reaches 5A.In terms of output current, 5A is the maximum value.In the datasheets, the peak reverse is 1μA, as indicated by the data chart.
1N5551US Features
an average rectified current of 3A volts
5A is the maximum value
the peak reverse is 1μA
1N5551US Applications
There are a lot of Microsemi Corporation
1N5551US applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
There is an average rectified current of 3A volts for this device.The allowable value of forward current reaches 5A.In terms of output current, 5A is the maximum value.In the datasheets, the peak reverse is 1μA, as indicated by the data chart.
1N5551US Features
an average rectified current of 3A volts
5A is the maximum value
the peak reverse is 1μA
1N5551US Applications
There are a lot of Microsemi Corporation
1N5551US applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5551US More Descriptions
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon
Rectifier Diode Switching 400V 5A 2000ns 2-Pin B-MELF Bag
Std Rectifier _ B-Body Sq. Melf
1N5551US Series 400 V 3 A Surface Mount Standard Recovery Glass Rectifier - D-5B
Diode Standard Recovery 400V 3A 2-Pin D-5B Bag
DIODE GEN PURP 1KV 40A DO203AB
Rectifier Diode Switching 400V 5A 2000ns 2-Pin B-MELF Bag
Std Rectifier _ B-Body Sq. Melf
1N5551US Series 400 V 3 A Surface Mount Standard Recovery Glass Rectifier - D-5B
Diode Standard Recovery 400V 3A 2-Pin D-5B Bag
DIODE GEN PURP 1KV 40A DO203AB
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