1N5551US

Microsemi Corporation 1N5551US

Part Number:
1N5551US
Manufacturer:
Microsemi Corporation
Ventron No:
2423667-1N5551US
Description:
DIODE GEN PURP 400V 3A D5B
ECAD Model:
Datasheet:
1N5551US

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Specifications
Microsemi Corporation 1N5551US technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N5551US.
  • Lifecycle Status
    IN PRODUCTION (Last Updated: 3 weeks ago)
  • Factory Lead Time
    7 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, B
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1997
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Technology
    AVALANCHE
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    1μA @ 400V
  • Voltage - Forward (Vf) (Max) @ If
    1.2V @ 9A
  • Case Connection
    ISOLATED
  • Forward Current
    5A
  • Operating Temperature - Junction
    -65°C~175°C
  • Output Current-Max
    5A
  • Application
    POWER
  • Forward Voltage
    1.2V
  • Max Reverse Voltage (DC)
    400V
  • Average Rectified Current
    3A
  • Number of Phases
    1
  • Reverse Recovery Time
    2 μs
  • Peak Reverse Current
    1μA
  • Max Repetitive Reverse Voltage (Vrrm)
    400V
  • Peak Non-Repetitive Surge Current
    100A
  • Radiation Hardening
    Yes
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
1N5551US Overview
There is an average rectified current of 3A volts for this device.The allowable value of forward current reaches 5A.In terms of output current, 5A is the maximum value.In the datasheets, the peak reverse is 1μA, as indicated by the data chart.

1N5551US Features
an average rectified current of 3A volts
5A is the maximum value
the peak reverse is 1μA


1N5551US Applications
There are a lot of Microsemi Corporation
1N5551US applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
1N5551US More Descriptions
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon
Rectifier Diode Switching 400V 5A 2000ns 2-Pin B-MELF Bag
Std Rectifier _ B-Body Sq. Melf
1N5551US Series 400 V 3 A Surface Mount Standard Recovery Glass Rectifier - D-5B
Diode Standard Recovery 400V 3A 2-Pin D-5B Bag
DIODE GEN PURP 1KV 40A DO203AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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