Diodes Incorporated 1N5406-T

Name: 1N5406-T
Brand: Diodes Incorporated
SKU: 2421397-1N5406-T
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N5406-T

Manufacturer:: Diodes Incorporated

Ventron No:: 2421397-1N5406-T

Description:: DIODE GEN PURP 600V 3A DO201AD

ECAD Model:

Datasheet:: 1N5400-08

Specifications

Diodes Incorporated 1N5406-T technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 1N5406-T.

Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Number of Pins
2
Weight
1.09999g
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
HTS Code
8541.10.00.80
Capacitance
25pF
Subcategory
Rectifier Diodes
Voltage - Rated DC
600V
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
1N5406
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
10μA @ 600V
Output Current
3A
Voltage - Forward (Vf) (Max) @ If
1V @ 3A
Case Connection
ISOLATED
Forward Current
3A
Operating Temperature - Junction
-65°C~150°C
Max Surge Current
200A
Application
GENERAL PURPOSE
Forward Voltage
1V
Max Reverse Voltage (DC)
600V
Average Rectified Current
3A
Number of Phases
1
Peak Reverse Current
10μA
Max Repetitive Reverse Voltage (Vrrm)
600V
Capacitance @ Vr, F
25pF @ 4V 1MHz
Peak Non-Repetitive Surge Current
200A
Reverse Voltage (DC)
600V
Diameter
5.3mm
Height
5.3mm
Length
9.5mm
Width
5.3mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

1N5406-T Overview
In this device, there is an average rectified current of 3A volts.Forward current may not exceed 3A.3A is its maximum current rating, which is the maximum current that a fuse can handle without deteriorating.This is the maximum amount of 200A surge current that can be used.Depending on the capacitance, the device may deliver a value of 25pF.As the data chart indicates, the peak reverse is 10μA.

1N5406-T Features
an average rectified current of 3A volts
a current rating of 3A
the peak reverse is 10μA

1N5406-T Applications
There are a lot of Diodes Incorporated
1N5406-T applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N5406-T More Descriptions

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, DO-201AD, 2 PIN

Product Comparison

The three parts on the right have similar specifications to 1N5406-T.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

HTS Code

Capacitance

Subcategory

Voltage - Rated DC

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Output Current

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Reverse Voltage (DC)

Diameter

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Rep Pk Reverse Voltage-Max

Non-rep Pk Forward Current-Max

Lifecycle Status

Additional Feature

Terminal Position

Reverse Recovery Time

Supplier Device Package

Polarity

Reverse Voltage

Max Forward Surge Current (Ifsm)

REACH SVHC

View Compare
1N5406-T

Diodes Incorporated

6 Weeks

Tin

Through Hole

Through Hole

DO-201AD, Axial

2

1.09999g

SILICON

Tape & Reel (TR)

2006

e3

no

Obsolete

1 (Unlimited)

2

EAR99

150°C

-65°C

8541.10.00.80

25pF

Rectifier Diodes

600V

WIRE

260

3A

40

1N5406

2

1

Single

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 600V

3A

1V @ 3A

ISOLATED

3A

-65°C~150°C

200A

GENERAL PURPOSE

1V

600V

3A

1

10μA

600V

25pF @ 4V 1MHz

200A

600V

5.3mm

5.3mm

9.5mm

5.3mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N5407RL

ON Semiconductor

-

-

-

Through Hole

DO-201AA, DO-27, Axial

-

-

SILICON

Tape & Reel (TR)

-

e3

yes

Obsolete

1 (Unlimited)

2

-

-

-

-

-

-

-

WIRE

260

-

40

-

2

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 800V

-

1V @ 3A

ISOLATED

-

-65°C~170°C

-

GENERAL PURPOSE

-

-

-

1

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

NO

MATTE TIN

unknown

O-PALF-W2

COMMERCIAL

SINGLE

3A

800V

3A

800V

200A

-

-

-

-

-

-

-

-

-

1N5406-T vs 1N5407RL
1N5418US

Microsemi Corporation

7 Weeks

-

Surface Mount

Surface Mount

E-MELF

2

-

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

-

175°C

-65°C

8541.10.00.80

-

-

-

WRAP AROUND

NOT SPECIFIED

-

NOT SPECIFIED

-

2

1

Single

Fast Recovery =< 500ns, > 200mA (Io)

Standard

1μA @ 400V

-

1.5V @ 9A

ISOLATED

-

-65°C~175°C

-

-

1.5V

400V

3A

1

1μA

400V

-

80A

-

-

-

-

-

Yes

Non-RoHS Compliant

Contains Lead

-

TIN LEAD

-

-

Not Qualified

-

3A

-

-

-

-

IN PRODUCTION (Last Updated: 1 month ago)

HIGH RELIABILITY, METALLURGICALLY BONDED

END

150 ns

-

-

-

-

-

1N5406-T vs 1N5418US
1N5407-E3/54

Vishay Semiconductor Diodes Division

18 Weeks

-

Through Hole

Through Hole

DO-201AD, Axial

2

-

-

Tape & Reel (TR)

2008

-

-

Active

Not Applicable

-

-

150°C

-50°C

-

30pF

-

-

-

-

3A

-

1N5407

-

-

Single

Standard Recovery >500ns, > 200mA (Io)

Standard

5μA @ 800V

3A

1.2V @ 3A

-

3A

-50°C~150°C

200A

-

1.2V

800V

3A

-

5μA

800V

30pF @ 4V 1MHz

200A

-

5.3mm

-

9.5mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

800V

3A

-

-

-

-

-

-

DO-201AD

Standard

800V

200A

Unknown

1N5406-T vs 1N5407-E3/54