Vishay Semiconductor Diodes Division 1N5235B-TR
- Part Number:
- 1N5235B-TR
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2437800-1N5235B-TR
- Description:
- DIODE ZENER 6.8V 500MW DO35
- Datasheet:
- 1N5235B-TR
Vishay Semiconductor Diodes Division 1N5235B-TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division 1N5235B-TR.
- Factory Lead Time10 Weeks
- Contact PlatingSilver, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseDO-204AH, DO-35, Axial
- Number of Pins2
- PackagingTape & Reel (TR)
- Published2008
- Tolerance±5%
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTIN SILVER
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- HTS Code8541.10.00.50
- Max Power Dissipation500mW
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)260
- Base Part Number1N5235
- Pin Count2
- Working Voltage6.8V
- Impedance5Ohm
- Element ConfigurationSingle
- Diode TypeZENER DIODE
- Current - Reverse Leakage @ Vr3μA @ 5V
- Power Dissipation500mW
- Voltage - Forward (Vf) (Max) @ If1.1V @ 200mA
- Forward Current200mA
- Max Reverse Leakage Current3μA
- Impedance-Max5Ohm
- Test Current20mA
- Breakdown Voltage6.8V
- Forward Voltage1.1V
- Zener Voltage6.8V
- Peak Reverse Current3μA
- Voltage Tolerance5%
- Zener Current200mA
- Diameter1.7mm
- Height1.7mm
- Length3.8862mm
- Width1.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
1N5235B-TR Overview
In order to supply this electrical device, a reverse leakage current of 3μA @ 5V is required.A reverse leakage current that reaches 3μA is the maximum.As it has a zener current of 200mA, it has a tremendous amount of design flexibility.1.1V @ 200mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.This device should function properly at a peak reverse voltage of 3μA.
1N5235B-TR Features
reverse leakage current of 3μA @ 5V
3μA @ 5V is the maximum voltage (Tol)
Reverse leakage current reaches 3μA
the zener current of 200mA
1N5235B-TR Applications
There are a lot of Vishay Semiconductor Diodes Division
1N5235B-TR applications of zener single diodes.
In order to supply this electrical device, a reverse leakage current of 3μA @ 5V is required.A reverse leakage current that reaches 3μA is the maximum.As it has a zener current of 200mA, it has a tremendous amount of design flexibility.1.1V @ 200mA is achieved when the maximum voltage - Forward (Vf) is applied for its operation.This device should function properly at a peak reverse voltage of 3μA.
1N5235B-TR Features
reverse leakage current of 3μA @ 5V
3μA @ 5V is the maximum voltage (Tol)
Reverse leakage current reaches 3μA
the zener current of 200mA
1N5235B-TR Applications
There are a lot of Vishay Semiconductor Diodes Division
1N5235B-TR applications of zener single diodes.
1N5235B-TR More Descriptions
Diode,Zener,Vr 6.8V,If 200mA,Pkg DO-35,Vf 1.1V,Tj 175degc,Pd 500mW,Ir 20mA
1N5235B Series 500 mW 6.8 V 5 % Tolerance Through Hole Zener Diode -DO-35
ZENER DIODE, 500mW, 6.8V, DO-35; Zener V; ZENER DIODE, 500mW, 6.8V, DO-35; Zener Voltage Vz Typ:6.8V; Power Dissipation Pd:500mW; Diode Case Style:DO-35; No. of Pins:2; Breakdown Voltage:6.8V; Diode Type:Zener; Leaded Process Compatible:No; Mounting Type:Through Hole
Diodes, Zener; Zener Voltage Typ, Vz:6.8V; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:6.8V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Vz Test Current, Izt:20mA ;RoHS Compliant: Yes
1N5235B Series 500 mW 6.8 V 5 % Tolerance Through Hole Zener Diode -DO-35
ZENER DIODE, 500mW, 6.8V, DO-35; Zener V; ZENER DIODE, 500mW, 6.8V, DO-35; Zener Voltage Vz Typ:6.8V; Power Dissipation Pd:500mW; Diode Case Style:DO-35; No. of Pins:2; Breakdown Voltage:6.8V; Diode Type:Zener; Leaded Process Compatible:No; Mounting Type:Through Hole
Diodes, Zener; Zener Voltage Typ, Vz:6.8V; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:6.8V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Vz Test Current, Izt:20mA ;RoHS Compliant: Yes
The three parts on the right have similar specifications to 1N5235B-TR.
-
ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsPackagingPublishedToleranceJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureHTS CodeMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Base Part NumberPin CountWorking VoltageImpedanceElement ConfigurationDiode TypeCurrent - Reverse Leakage @ VrPower DissipationVoltage - Forward (Vf) (Max) @ IfForward CurrentMax Reverse Leakage CurrentImpedance-MaxTest CurrentBreakdown VoltageForward VoltageZener VoltagePeak Reverse CurrentVoltage ToleranceZener CurrentDiameterHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusOperating TemperaturePower - MaxVoltage - Zener (Nom) (Vz)Reach Compliance CodeView Compare
-
1N5235B-TR10 WeeksSilver, TinThrough HoleThrough HoleDO-204AH, DO-35, Axial2Tape & Reel (TR)2008±5%e2yesActive1 (Unlimited)2EAR99TIN SILVER175°C-65°C8541.10.00.50500mWWIRE2601N523526.8V5OhmSingleZENER DIODE3μA @ 5V500mW1.1V @ 200mA200mA3μA5Ohm20mA6.8V1.1V6.8V3μA5%200mA1.7mm1.7mm3.8862mm1.7mmUnknownNoROHS3 CompliantLead Free------
-
22 Weeks-Through Hole--2-----Active----175°C-65°C--------Single----------4.3V-10%-------Non-RoHS Compliant-IN PRODUCTION (Last Updated: 3 weeks ago)----
-
13 Weeks--Through HoleDO-204AH, DO-35, Axial-Bulk-±5%--Active----------------100μA @ 1V-1.1V @ 200mA--30Ohm-------------ROHS3 Compliant---65°C~200°C TJ500mW2.5V-
-
13 Weeks--Through HoleDO-204AH, DO-35, Axial-Bulk-±5%--Active1 (Unlimited)---------------100μA @ 1V-1.1V @ 200mA--30Ohm-----------------65°C~200°C500mW2.4Vcompliant
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
27 March 2024
STM32F030K6T6 Microcontroller Symbol, Characteristics, Specifications and Other Details
Ⅰ. Description of STM32F030K6T6Ⅱ. Functional characteristics of STM32F030K6T6Ⅲ. STM32F030K6T6 specificationsⅣ. Structure of STM32F030K6T6Ⅴ. STM32F030K6T6 symbol, footprint and pin configurationⅥ. STM32F030K6T6 development tools and ecosystemⅦ. Application cases of STM32F030K6T6STM32F030K6T6... -
28 March 2024
An Introduction to TPS54302DDCR Synchronous Buck Converter
Ⅰ. What is TPS54302DDCR?Ⅱ. Characteristics of TPS54302DDCRⅢ. Simplified schematic of TPS54302DDCRⅣ. What are the advantages of TPS54302DDCR?Ⅴ. Technical parameters of TPS54302DDCRⅥ. Pin configuration and functions of TPS54302DDCRⅦ. Protection... -
28 March 2024
UCC27517DBVR Gate Driver: Replacements, Advantages, Application and Package
Ⅰ. UCC27517DBVR overviewⅡ. Technical parameters of UCC27517DBVRⅢ. UCC27517DBVR's typical characteristicsⅣ. What are the advantages of UCC27517DBVR compared with other gate driver ICs?Ⅴ. What applications is the UCC27517DBVR typically... -
29 March 2024
TLP2362 Optocoupler Characteristics, Specifications, Working Principle and More
Ⅰ. Overview of TLP2362Ⅱ. Characteristics of TLP2362Ⅲ. Specifications of TLP2362Ⅳ. Recommended operating conditions of TLP2362Ⅴ. How does TLP2362 work?Ⅵ. Internal equivalent circuit of TLP2362Ⅶ. Storage and soldering of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.