Microsemi Corporation 1N4446

Name: 1N4446
Brand: Microsemi Corporation
SKU: 3582013-1N4446
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N4446

Manufacturer:: Microsemi Corporation

Ventron No:: 3582013-1N4446

Description:: DIODE GEN PURP 75V 200MA DO35

ECAD Model:

Datasheet:: 1N4446 1N4149,4151,4154;1N4446-4449

Specifications

Microsemi Corporation 1N4446 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N4446.

Voltage - Forward (Vf) (Max) @ If:
1V @ 20mA
Voltage - DC Reverse (Vr) (Max):
75V
Supplier Device Package:
DO-35
Speed:
Small Signal =< 200mA (Io), Any Speed
Series:
-
Reverse Recovery Time (trr):
4ns
Packaging:
Bulk
Package / Case:
DO-204AH, DO-35, Axial
Operating Temperature - Junction:
-65°C ~ 150°C
Mounting Type:
Through Hole
Diode Type:
Standard
Current - Reverse Leakage @ Vr:
25nA @ 20V
Current - Average Rectified (Io):
200mA
Capacitance @ Vr, F:
-

Description

We can supply Microsemi 1N4446, use the request quote form to request 1N4446 pirce, Microsemi Datasheet PDF and lead time.ventronchip.com is a professional electronic components distributor. With 3 Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 1N4446.The price and lead time for 1N4446 depending on the quantity required, availability and warehouse location.

1N4446 More Descriptions

Diode Silicon Prv=75V If=200 Ma Do-35 Case High Speed Switching ApplicationsNTE Electronics
DIODE GEN PURP 100V 200MA DO35
Small Signal Diode
D-SI 100PRV .02A

Product Comparison

The three parts on the right have similar specifications to 1N4446.

Image

Part Number

Manufacturer

Voltage - Forward (Vf) (Max) @ If:

Voltage - DC Reverse (Vr) (Max):

Supplier Device Package:

Speed:

Series:

Reverse Recovery Time (trr):

Packaging:

Package / Case:

Operating Temperature - Junction:

Mounting Type:

Diode Type:

Current - Reverse Leakage @ Vr:

Current - Average Rectified (Io):

Capacitance @ Vr, F:

Mounting Type

Package / Case

Supplier Device Package

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Operating Temperature - Junction

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Reverse Recovery Time

Capacitance @ Vr, F

Mount

Number of Pins

Weight

Diode Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

HTS Code

Capacitance

Subcategory

Power Rating

Voltage - Rated DC

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Element Configuration

Output Current

Forward Current

Max Surge Current

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Peak Reverse Current

Peak Non-Repetitive Surge Current

Recovery Time

Height

Length

Width

RoHS Status

Lead Free

Surface Mount

Pbfree Code

JESD-30 Code

Configuration

Case Connection

Output Current-Max

Rep Pk Reverse Voltage-Max

View Compare
1N4446

Microsemi Corporation

1V @ 20mA

75V

DO-35

Small Signal =< 200mA (Io), Any Speed

-

4ns

Bulk

DO-204AH, DO-35, Axial

-65°C ~ 150°C

Through Hole

Standard

25nA @ 20V

200mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N4448_T50R

Fairchild/ON Semiconductor

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

Tape & Reel (TR)

Obsolete

1 (Unlimited)

1N4448

Small Signal =< 200mA (Io), Any Speed

Standard

5μA @ 75V

1V @ 100mA

-65°C~175°C

100V

200mA

4ns

2pF @ 0V 1MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1N4446 vs 1N4448_T50R
1N4448HWS-7

Diodes Incorporated

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

SC-76, SOD-323

-

Tape & Reel (TR)

Discontinued

1 (Unlimited)

1N4448H

Fast Recovery =< 500ns, > 200mA (Io)

Standard

100nA @ 80V

1.25V @ 150mA

-65°C~150°C

-

-

4 ns

3.5pF @ 0V 1MHz

Surface Mount

2

4.904468mg

SILICON

2006

e0

2

EAR99

Tin/Lead (Sn85Pb15)

150°C

-65°C

8541.10.00.70

3.5pF

Rectifier Diodes

200mW

80V

DUAL

GULL WING

235

not_compliant

500mA

10

2

Not Qualified

1

Single

250mA

250mA

4A

1.25V

80V

250mA

100nA

4A

4 ns

1mm

1.8mm

1.4mm

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

1N4446 vs 1N4448HWS-7
1N4449 BK

Central Semiconductor Corp

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

DO-204AH, DO-35, Axial

-

Bulk

Obsolete

1 (Unlimited)

-

Small Signal =< 200mA (Io), Any Speed

Standard

25nA @ 20V

730mV @ 5mA

-65°C~200°C

100V

150mA

4ns

2pF @ 0V 1MHz

-

-

-

SILICON

-

e3

2

EAR99

MATTE TIN (315)

-

-

8541.10.00.70

-

-

-

-

-

WIRE

260

compliant

-

10

-

Not Qualified

1

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

NO

yes

O-PALF-W2

SINGLE

ISOLATED

0.15A

100V

1N4446 vs 1N4449 BK