Microsemi Corporation 1N4248

Name: 1N4248
Brand: Microsemi Corporation
SKU: 3582465-1N4248
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N4248

Manufacturer:: Microsemi Corporation

Ventron No:: 3582465-1N4248

Description:: DIODE GEN PURP 800V 1A AXIAL

ECAD Model:

Datasheet:: 1N4248

Specifications

Microsemi Corporation 1N4248 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N4248.

Factory Lead Time
12 Weeks
Mounting Type
Through Hole
Package / Case
Axial
Surface Mount
NO
Diode Element Material
SILICON
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Form
WIRE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
2
JESD-30 Code
E-XALF-W2
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Operating Temperature (Min)
-65°C
Number of Elements
1
Configuration
SINGLE
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
1μA @ 800V
Voltage - Forward (Vf) (Max) @ If
1.2V @ 1A
Case Connection
ISOLATED
Output Current-Max
1A
Voltage - DC Reverse (Vr) (Max)
800V
Current - Average Rectified (Io)
1A DC
Reverse Recovery Time
2μs
Rep Pk Reverse Voltage-Max
800V
Non-rep Pk Forward Current-Max
25A
RoHS Status
Non-RoHS Compliant

Description

1N4248 Overview
1A represents the maximum output current.

1N4248 Features
1A is the maximum value

1N4248 Applications
There are a lot of Semtech Corporation
1N4248 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N4248 More Descriptions

Electronics 1N4248 Rectifier Silicon Prv=800V Io=1A Axial Lead Case
R-Si 800V 1A Rohs Compliant: Yes
DIODE GEN PURP 800V 1A AXIAL

Product Comparison

The three parts on the right have similar specifications to 1N4248.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Diode Element Material

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Operating Temperature (Min)

Number of Elements

Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Output Current-Max

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Reverse Recovery Time

Rep Pk Reverse Voltage-Max

Non-rep Pk Forward Current-Max

RoHS Status

Contact Plating

Mount

Number of Pins

Series

Published

Max Operating Temperature

Min Operating Temperature

Additional Feature

Base Part Number

Element Configuration

Operating Temperature - Junction

Max Surge Current

Max Reverse Voltage (DC)

Average Rectified Current

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Capacitance @ Vr, F

Peak Non-Repetitive Surge Current

Reverse Voltage

Forward Voltage

Radiation Hardening

View Compare
1N4248

Microsemi Corporation

12 Weeks

Through Hole

Axial

NO

SILICON

Bulk

e0

no

Active

Not Applicable

2

EAR99

Tin/Lead (Sn/Pb)

8541.10.00.80

Rectifier Diodes

WIRE

NOT SPECIFIED

unknown

NOT SPECIFIED

2

E-XALF-W2

Not Qualified

175°C

-65°C

1

SINGLE

Standard Recovery >500ns, > 200mA (Io)

Standard

1μA @ 800V

1.2V @ 1A

ISOLATED

1A

800V

1A DC

2μs

800V

25A

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N4246GPHE3/73

Vishay Semiconductor Diodes Division

-

Through Hole

DO-204AL, DO-41, Axial

-

SILICON

Tape & Box (TB)

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

-

8541.10.00.80

Rectifier Diodes

WIRE

NOT SPECIFIED

unknown

NOT SPECIFIED

2

-

Not Qualified

-

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard

1μA @ 400V

1.2V @ 1A

ISOLATED

1A

-

-

-

-

-

ROHS3 Compliant

Tin

Through Hole

2

SUPERECTIFIER®

2009

160°C

-65°C

FREE WHEELING DIODE, HIGH RELIABILITY

1N4246

Single

-65°C~160°C

25A

400V

1A

1μA

400V

8pF @ 4V 1MHz

25A

400V

-

-

1N4248 vs 1N4246GPHE3/73
1N4247GPHE3/54

Vishay Semiconductor Diodes Division

-

Through Hole

DO-204AL, DO-41, Axial

-

SILICON

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

-

8541.10.00.80

Rectifier Diodes

WIRE

NOT SPECIFIED

unknown

NOT SPECIFIED

2

-

Not Qualified

-

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard

1μA @ 600V

1.2V @ 1A

ISOLATED

1A

-

-

-

-

-

ROHS3 Compliant

Tin

Through Hole

2

SUPERECTIFIER®

2009

160°C

-65°C

FREE WHEELING DIODE, HIGH RELIABILITY

1N4247

Single

-65°C~160°C

25A

600V

1A

1μA

600V

8pF @ 4V 1MHz

25A

600V

-

-

1N4248 vs 1N4247GPHE3/54
1N4247GP-E3/73

Vishay Semiconductor Diodes Division

22 Weeks

Through Hole

DO-204AL, DO-41, Axial

-

SILICON

Tape & Box (TB)

e3

yes

Active

1 (Unlimited)

2

EAR99

-

8541.10.00.80

Rectifier Diodes

WIRE

-

-

-

2

-

-

-

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard

1μA @ 600V

1.2V @ 1A

ISOLATED

1A

-

-

-

-

-

ROHS3 Compliant

Tin

Through Hole

2

SUPERECTIFIER®

2016

160°C

-65°C

FREE WHEELING DIODE, HIGH RELIABILITY

1N4247

Single

-65°C~160°C

25A

600V

1A

1μA

600V

8pF @ 4V 1MHz

25A

600V

1.2V

No

1N4248 vs 1N4247GP-E3/73