GeneSiC Semiconductor 1N3889

Name: 1N3889
Brand: GeneSiC Semiconductor
SKU: 3063659-1N3889
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N3889

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 3063659-1N3889

Description:: DIODE GEN PURP 50V 12A DO4

ECAD Model:

Datasheet:: 1N3889

Specifications

GeneSiC Semiconductor 1N3889 technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N3889.

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time
10 Weeks
Mount
Chassis, Stud
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AA, DO-4, Stud
Number of Pins
2
Supplier Device Package
DO-4
Packaging
Bulk
Published
2010
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
1N3889
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
25μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.4V @ 12A
Forward Current
12A
Operating Temperature - Junction
-65°C~150°C
Max Surge Current
90A
Voltage - DC Reverse (Vr) (Max)
50V
Current - Average Rectified (Io)
12A
Max Reverse Voltage (DC)
50V
Average Rectified Current
12A
Reverse Recovery Time
200 ns
Peak Reverse Current
25μA
Max Repetitive Reverse Voltage (Vrrm)
50V
Reverse Voltage
50V
Recovery Time
200 ns
RoHS Status
RoHS Compliant

Description

1N3889 Overview
A reverse voltage of 50V is reasonable.This device has an average rectified current of 12A volts.Forward current is allowed to reach a value of zero.Surge currents can be used up to 90A.Datasheets indicate that the peak reverse is 25μA.

1N3889 Features
an average rectified current of 12A volts
the peak reverse is 25μA

1N3889 Applications
There are a lot of GeneSiC Semiconductor
1N3889 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N3889 More Descriptions

50V 12A DO-4 Silicon Stud Rectifier - Fast Recovery (Standard Configuration)
DIODE GEN PURP 50V 12A DO4
Fast Recovery - 50 V - 12 A
Fast Recovery Diode, 50V, 12A, Do-4; Repetitive Peak Reverse Voltage:50V; Average Forward Current:12A; Forward Voltage Max:1.4V; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Forward Surge Current:90A Rohs Compliant: Yes |Genesic Semiconductor 1N3889

Product Comparison

The three parts on the right have similar specifications to 1N3889.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Reverse Voltage

Recovery Time

RoHS Status

Diode Element Material

Number of Terminations

ECCN Code

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Element Configuration

Forward Voltage

Number of Phases

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Natural Thermal Resistance

REACH SVHC

Radiation Hardening

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Output Current-Max

View Compare
1N3889

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

10 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

2

DO-4

Bulk

2010

Active

1 (Unlimited)

1N3889

Fast Recovery =< 500ns, > 200mA (Io)

Standard

25μA @ 50V

1.4V @ 12A

12A

-65°C~150°C

90A

50V

12A

50V

12A

200 ns

25μA

50V

50V

200 ns

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
VS-1N3893

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

2

-

Bulk

2005

Active

1 (Unlimited)

1N3893

Fast Recovery =< 500ns, > 200mA (Io)

Standard

25μA @ 400V

1.4V @ 12A

12A

-65°C~150°C

180A

-

-

400V

12A

300 ns

25μA

400V

400V

300 ns

ROHS3 Compliant

SILICON

1

EAR99

150°C

-65°C

FREE WHEELING DIODE

8541.10.00.80

UPPER

SOLDER LUG

O-MUPM-D1

1

Single

1.4V

1

180A

150A

0.5 °C/W

Unknown

No

-

-

-

-

1N3889 vs VS-1N3893
VS-1N3880R

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

-

-

Bulk

-

Active

1 (Unlimited)

1N3880

Fast Recovery =< 500ns, > 200mA (Io)

Standard, Reverse Polarity

15μA @ 100V

1.4V @ 6A

-

-65°C~150°C

90A

-

-

100V

6A

300 ns

15μA

-

100V

300 ns

ROHS3 Compliant

SILICON

1

EAR99

150°C

-65°C

FREE WHEELING DIODE

8541.10.00.80

UPPER

SOLDER LUG

O-MUPM-D1

1

Single

-

1

-

-

0.5 °C/W

-

-

NOT SPECIFIED

unknown

NOT SPECIFIED

6A

1N3889 vs VS-1N3880R
VS-1N3882R

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

-

-

Bulk

-

Active

1 (Unlimited)

1N3882

Fast Recovery =< 500ns, > 200mA (Io)

Standard, Reverse Polarity

15μA @ 300V

1.4V @ 6A

-

-65°C~150°C

90A

-

-

300V

6A

300 ns

15μA

-

300V

300 ns

ROHS3 Compliant

SILICON

1

EAR99

150°C

-65°C

FREE WHEELING DIODE

8541.10.00.80

UPPER

SOLDER LUG

O-MUPM-D1

1

Single

-

1

-

-

0.5 °C/W

-

-

NOT SPECIFIED

unknown

NOT SPECIFIED

6A

1N3889 vs VS-1N3882R