Microsemi Corporation 1N3600

Name: 1N3600
Brand: Microsemi Corporation
SKU: 2429323-1N3600
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N3600

Manufacturer:: Microsemi Corporation

Ventron No:: 2429323-1N3600

Description:: DIODE GEN PURP 50V 200MA DO35

ECAD Model:

Datasheet:: 1N3600

Specifications

Microsemi Corporation 1N3600 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 1N3600.

Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Factory Lead Time
6 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
1999
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
METALLURGICALLY BONDED
HTS Code
8541.10.00.70
Terminal Form
WIRE
Pin Count
2
Number of Elements
1
Power Dissipation-Max
0.5W
Element Configuration
Single
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Standard
Current - Reverse Leakage @ Vr
100nA @ 50V
Voltage - Forward (Vf) (Max) @ If
1V @ 200mA
Case Connection
ISOLATED
Forward Current
300mA
Operating Temperature - Junction
-65°C~175°C
Max Reverse Voltage (DC)
50V
Average Rectified Current
200mA
Reverse Recovery Time
4 ns
Peak Reverse Current
100nA
Max Repetitive Reverse Voltage (Vrrm)
50V
JEDEC-95 Code
DO-7
Peak Non-Repetitive Surge Current
4A
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

1N3600 Overview
Devices like this have an average rectified current of 200mA volts.There is no limit to the forward current value.On the data sheets, the peak reverse is indicated by the data chart as 100nA.

1N3600 Features
an average rectified current of 200mA volts
the peak reverse is 100nA

1N3600 Applications
There are a lot of Microsemi Corporation
1N3600 applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N3600 More Descriptions

Rectifier Diode Switching 50V 0.2A 4ns 2-Pin DO-7 Bag
Signal or Computer Diode _ DO-35
Diode Small Signal Switching 50V 200mA 2-Pin Axial DO-35

Product Comparison

The three parts on the right have similar specifications to 1N3600.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Terminal Form

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Reverse Voltage (DC)

Average Rectified Current

Reverse Recovery Time

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

JEDEC-95 Code

Peak Non-Repetitive Surge Current

Radiation Hardening

RoHS Status

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Configuration

Max Surge Current

Application

Voltage - DC Reverse (Vr) (Max)

Number of Phases

Reverse Voltage

Reach Compliance Code

Qualification Status

View Compare
1N3600

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

6 Weeks

Through Hole

Through Hole

DO-204AH, DO-35, Axial

2

SILICON

Bulk

1999

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

175°C

-65°C

METALLURGICALLY BONDED

8541.10.00.70

WIRE

2

1

0.5W

Single

Small Signal =< 200mA (Io), Any Speed

Standard

100nA @ 50V

1V @ 200mA

ISOLATED

300mA

-65°C~175°C

50V

200mA

4 ns

100nA

50V

DO-7

4A

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N3673AR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

2

SILICON

Bulk

2010

-

yes

Active

1 (Unlimited)

1

-

-

-

-

-

-

SOLDER LUG

-

1

-

-

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

10μA @ 50V

1.1V @ 12A

ANODE

12A

-65°C~200°C

1kV

12A

-

10μA

1kV

-

-

-

RoHS Compliant

UPPER

NOT SPECIFIED

NOT SPECIFIED

1N3673AR

O-MUPM-D1

SINGLE

240A

GENERAL PURPOSE

1000V

1

1kV

-

-

1N3600 vs 1N3673AR
1N3612GP-M3/73

Vishay Semiconductor Diodes Division

-

-

-

-

-

-

-

Tape & Box (TB)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

1N3600 vs 1N3612GP-M3/73
1N3645

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

17 Weeks

Through Hole

Through Hole

S, Axial

2

SILICON

Bulk

1997

e0

no

Active

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

175°C

-65°C

METALLURGICALLY BONDED, HIGH RELIABILITY

8541.10.00.70

WIRE

-

1

-

Single

Standard Recovery >500ns, > 200mA (Io)

Standard

100μA @ 1400V

5V @ 250mA

ISOLATED

-

-65°C~175°C

1.4kV

250mA

-

5μA

2kV

-

14A

Yes

Non-RoHS Compliant

-

NOT SPECIFIED

NOT SPECIFIED

-

-

-

-

-

1400V

-

-

not_compliant

Not Qualified

1N3600 vs 1N3645