GeneSiC Semiconductor 1N1206AR

Name: 1N1206AR
Brand: GeneSiC Semiconductor
SKU: 2825185-1N1206AR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N1206AR

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2825185-1N1206AR

Description:: DIODE GEN PURP REV 600V 12A DO4

ECAD Model:

Datasheet:: 1N1206AR

Specifications

GeneSiC Semiconductor 1N1206AR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N1206AR.

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis, Stud
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AA, DO-4, Stud
Number of Pins
2
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
1
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Terminal Position
UPPER
Terminal Form
SOLDER LUG
Base Part Number
1N1206AR
JESD-30 Code
O-MUPM-D1
Number of Elements
1
Element Configuration
Single
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard, Reverse Polarity
Current - Reverse Leakage @ Vr
10μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.1V @ 12A
Forward Current
12A
Operating Temperature - Junction
-65°C~200°C
Max Surge Current
240A
Application
GENERAL PURPOSE
Forward Voltage
1.1V
Max Reverse Voltage (DC)
600V
Average Rectified Current
12A
Number of Phases
1
Peak Reverse Current
10μA
Max Repetitive Reverse Voltage (Vrrm)
600V
Peak Non-Repetitive Surge Current
240A
Reverse Voltage
600V
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

1N1206AR Overview
An acceptable reverse voltage would be 600V.As a result, this device has a rectified current of 12A volts on average.Phase diode rectifier is permissible for forward current to reach 12A.There is no maximum value for 240A surge current.Based on the data charts in the datasheets, the peak reverse is 10μA.

1N1206AR Features
an average rectified current of 12A volts
the peak reverse is 10μA

1N1206AR Applications
There are a lot of GeneSiC Semiconductor
1N1206AR applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N1206AR More Descriptions

Diode Standard Recovery Rectifier 600V 12A 2-Pin DO-4
Std Rectifier Do-4 Rohs Compliant: Yes |Microchip 1N1206AR
DIODE GEN PURP 200V 60A TO247AC

Product Comparison

The three parts on the right have similar specifications to 1N1206AR.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Terminal Position

Terminal Form

Base Part Number

JESD-30 Code

Number of Elements

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Reverse Voltage

Radiation Hardening

RoHS Status

Supplier Device Package

Current Rating

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Natural Thermal Resistance

View Compare
1N1206AR

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

2

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

1

200°C

-65°C

UPPER

SOLDER LUG

1N1206AR

O-MUPM-D1

1

Single

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

10μA @ 50V

1.1V @ 12A

12A

-65°C~200°C

240A

GENERAL PURPOSE

1.1V

600V

12A

1

10μA

600V

240A

600V

No

RoHS Compliant

-

-

-

-

-

-
VS-1N1203RA

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

-

-

Bulk

2011

-

Active

1 (Unlimited)

-

200°C

-65°C

-

-

1N1203

-

-

Single

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

1.75mA @ 300V

1.35V @ 12A

12A

-65°C~200°C

240A

-

-

300V

12A

-

1.75mA

300V

240A

300V

-

ROHS3 Compliant

DO-203AA

12A

300V

12A

0.5 °C/W

1N1206AR vs VS-1N1203RA
1N1202A

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

-

-

Bulk

2010

-

Active

1 (Unlimited)

-

-

-

-

-

1N1202

-

-

-

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 50V

1.1V @ 12A

12A

-65°C~200°C

240A

-

-

200V

12A

-

10μA

200V

-

200V

-

RoHS Compliant

DO-4

-

200V

12A

-

1N1206AR vs 1N1202A
1N1206A

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

2

-

Bulk

2010

-

Active

1 (Unlimited)

-

-

-

-

-

1N1206

-

-

-

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 50V

1.1V @ 12A

12A

-65°C~200°C

240A

-

-

600V

12A

-

10μA

600V

-

600V

-

RoHS Compliant

DO-4

-

600V

12A

-

1N1206AR vs 1N1206A