Silicon Labs SI823H4AB-IS1
- Part Number:
- SI823H4AB-IS1
- Manufacturer:
- Silicon Labs
- Ventron No:
- 7071818-SI823H4AB-IS1
- Description:
- SI823H4AB-IS1 datasheet pdf and Isolators - Gate Drivers product details from Silicon Labs stock available at Ventron
- ECAD Model:
-
- Datasheet:
- SI823H4AB-IS1
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case16-SOIC (0.154, 3.90mm Width)
- Operating Temperature-40°C~125°C
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyCapacitive Coupling
- Approval AgencyCQC, CSA, UL, VDE
- Voltage - Isolation2500Vrms
- Number of Channels2
- Current - Output High, Low4A 4A
- Rise / Fall Time (Typ)12ns 12ns
- Interface IC TypeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Propagation Delay tpLH / tpHL (Max)30ns, 58ns
- Common Mode Transient Immunity (Min)125kV/μs
- Pulse Width Distortion (Max)5ns
- Voltage - Output Supply5.5V~30V
- Current - Peak Output6A
This product is manufactured by Silicon Labs, features an isolator and gate driver electronic component with a surface mount installation option. The package or case size is 16-SOIC, measuring 0.154 inches in width and 3.90 inches in height. The operating temperature range for this product is between -40°C and 125°C, making it suitable for various applications. Currently active, the technology employed is capacitive coupling, which ensures reliable performance. The maximum current output for both high and low is 4A, while the rise and fall time typically stands at 12 nanoseconds each. The interface IC type used is based on buffer or inverter peripheral drivers, providing efficient and stable operation. The pulse width distortion (PWD) limit stands at 5 nanoseconds, ensuring optimal performance. Finally, the voltage output supply capabilities of this device are rated at 5.5V to 30V, offering versatility in power requirements.
2.5KV DUAL GATE DRIVERS, LOW PRO
GATE DRIVER IC
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyApproval AgencyVoltage - IsolationNumber of ChannelsCurrent - Output High, LowRise / Fall Time (Typ)Interface IC TypePropagation Delay tpLH / tpHL (Max)Common Mode Transient Immunity (Min)Pulse Width Distortion (Max)Voltage - Output SupplyCurrent - Peak OutputPublishedSeriesReach Compliance CodeRoHS StatusView Compare
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SI823H4AB-IS18 WeeksSurface Mount16-SOIC (0.154, 3.90mm Width)-40°C~125°CTubeActive3 (168 Hours)Capacitive CouplingCQC, CSA, UL, VDE2500Vrms24A 4A12ns 12nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER30ns, 58ns125kV/μs5ns5.5V~30V6A----- -
8 WeeksSurface Mount14-VDFN-40°C~125°CTubeActive2 (1 Year)Capacitive CouplingCQC, CSA, UR, VDE2500Vrms22A 4A12ns 12nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER60ns, 60ns45kV/μs5.6ns6.5V~24V4A2017Automotive, AEC-Q100compliantRoHS Compliant
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8 WeeksSurface Mount14-SOIC (0.295, 7.50mm Width)-40°C~125°CTubeActive2A (4 Weeks)Capacitive CouplingCQC, CSA, UR, VDE5000Vrms22A 4A12ns 12nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER60ns, 60ns45kV/μs5.6ns6.5V~24V4A2017Automotive, AEC-Q100compliantRoHS Compliant
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8 WeeksSurface Mount14-VDFN-40°C~125°CTubeActive3 (168 Hours)Capacitive CouplingCQC, CSA, UR, VDE2500Vrms22A 4A12ns 12nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER60ns, 60ns45kV/μs5.6ns6.5V~24V4A2017Automotive, AEC-Q100compliantRoHS Compliant
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