Silicon Labs SI823H3AB-IS1
- Part Number:
- SI823H3AB-IS1
- Manufacturer:
- Silicon Labs
- Ventron No:
- 7071810-SI823H3AB-IS1
- Description:
- SI823H3AB-IS1 datasheet pdf and Isolators - Gate Drivers product details from Silicon Labs stock available at Ventron
- ECAD Model:
-
- Datasheet:
- SI823H3AB-IS1
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case16-SOIC (0.154, 3.90mm Width)
- Operating Temperature-40°C~125°C
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyCapacitive Coupling
- Approval AgencyCQC, CSA, UL, VDE
- Voltage - Isolation2500Vrms
- Number of Channels2
- Current - Output High, Low4A 4A
- Rise / Fall Time (Typ)12ns 12ns
- Interface IC TypeBUFFER OR INVERTER BASED PERIPHERAL DRIVER
- Propagation Delay tpLH / tpHL (Max)30ns, 58ns
- Common Mode Transient Immunity (Min)125kV/μs
- Pulse Width Distortion (Max)5ns
- Voltage - Output Supply5.5V~30V
- Current - Peak Output6A
The Silicon Labs brand offers an Isolators-Gate Drivers electronic component, a crucial element within its Isolators-Gate Drivers product category. This component operates at an ambient temperature range of -40°C to 125°C, making it suitable for diverse applications. It is currently in an active state and features a high moisture sensitivity level (MSL) of 3 (168 hours). In terms of voltage isolation, it provides a reliable 2500Vrms output with two channels available. Its current-output capabilities are impressive, reaching up to 4A on both the high and low sides. Additionally, it has a short rise/fall time of just 12ns on both sides, ensuring seamless transitions. The maximum propagation delay for this component is 30ns for the tpLH and tpHL, while the pulse width distortion (PWD) does not exceed 5ns. Lastly, the voltage-output supply range is between 5.5V and 30V, providing ample flexibility for users.
2.5KV DUAL GATE DRIVERS, LOW PRO
GATE DRIVER IC
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyApproval AgencyVoltage - IsolationNumber of ChannelsCurrent - Output High, LowRise / Fall Time (Typ)Interface IC TypePropagation Delay tpLH / tpHL (Max)Common Mode Transient Immunity (Min)Pulse Width Distortion (Max)Voltage - Output SupplyCurrent - Peak OutputPublishedSeriesRoHS StatusReach Compliance CodeView Compare
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SI823H3AB-IS18 WeeksSurface Mount16-SOIC (0.154, 3.90mm Width)-40°C~125°CTubeActive3 (168 Hours)Capacitive CouplingCQC, CSA, UL, VDE2500Vrms24A 4A12ns 12nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER30ns, 58ns125kV/μs5ns5.5V~30V6A----- -
8 WeeksSurface Mount14-SOIC (0.295, 7.50mm Width)-40°C~125°CTubeActive3 (168 Hours)Capacitive CouplingCQC, CSA, UR, VDE5000Vrms22A 4A12ns 12nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER60ns, 60ns45kV/μs5.6ns6.5V~24V4A2017Automotive, AEC-Q100Non-RoHS Compliant-
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8 WeeksSurface Mount14-VDFN-40°C~125°CTubeActive3 (168 Hours)Capacitive CouplingCQC, CSA, UR, VDE2500Vrms22A 4A12ns 12nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER60ns, 60ns45kV/μs5.6ns6.5V~24V4A2017Automotive, AEC-Q100RoHS Compliantcompliant
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8 WeeksSurface Mount14-SOIC (0.295, 7.50mm Width)-40°C~125°CTubeActive2A (4 Weeks)Capacitive CouplingCQC, CSA, UR, VDE5000Vrms2250mA 500mA20ns 20nsBUFFER OR INVERTER BASED PERIPHERAL DRIVER60ns, 60ns45kV/μs5.6ns6.5V~24V500mA2017Automotive, AEC-Q100RoHS Compliantcompliant
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