Infineon Technologies BGA7L1BN6E6327XTSA1
- Part Number:
- BGA7L1BN6E6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 7532971-BGA7L1BN6E6327XTSA1
- Description:
- 13.6dB LTE Tape & Reel (TR) 716MHz~960MHz 1.5V~3.6V 1.8dB Surface Mount
- Datasheet:
- BGA7L1BN6E6327XTSA1
Infineon Technologies BGA7L1BN6E6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BGA7L1BN6E6327XTSA1.
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / Case6-XFDFN
- Surface MountYES
- PackagingTape & Reel (TR)
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- HTS Code8542.39.00.01
- Voltage - Supply1.5V~3.6V
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage2.8V
- Terminal Pitch0.4mm
- Frequency716MHz~960MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBCC-N6
- Operating Temperature (Max)85°C
- Operating Temperature (Min)-40°C
- Temperature GradeINDUSTRIAL
- Test Frequency960MHz
- Current - Supply4.9mA
- Gain13.6dB
- Telecom IC TypeRF AND BASEBAND CIRCUIT
- RF TypeLTE
- Noise Figure1.8dB
- Length1.1mm
- Height Seated (Max)0.4mm
- Width0.7mm
- RoHS StatusROHS3 Compliant
BGA7L1BN6E6327XTSA1 Overview
RF Type LTE from the RF amplifier.The RF Amp' packaging Tape & Reel (TR) provides high reliability.The RF power Amplifier is convenient for international shipping since it is packaged in 6-XFDFN.mount Amplifiers RFing in Surface Mount is recommended.It is capable of supplying a voltage of 1.5V~3.6V volts.A total of 1 functions are present in the RF Amplifier.During operation, it uses a RF Amplifiers' current of 4.9mA as its supply RF Amplifiers' current.A variety of terminations with 6.
BGA7L1BN6E6327XTSA1 Features
RF Type LTE
1.5V~3.6V voltage
4.9mA current
BGA7L1BN6E6327XTSA1 Applications
There are a lot of Infineon Technologies
BGA7L1BN6E6327XTSA1 RF Amplifiers applications.
Personal Navigation Device (PND)
Cellular Phones with GPS
Notebook PC
Ultra-Mobile PC
Recreational
Marine Navigation
Avionics
GPS
GLONASS
BeiDou
RF Type LTE from the RF amplifier.The RF Amp' packaging Tape & Reel (TR) provides high reliability.The RF power Amplifier is convenient for international shipping since it is packaged in 6-XFDFN.mount Amplifiers RFing in Surface Mount is recommended.It is capable of supplying a voltage of 1.5V~3.6V volts.A total of 1 functions are present in the RF Amplifier.During operation, it uses a RF Amplifiers' current of 4.9mA as its supply RF Amplifiers' current.A variety of terminations with 6.
BGA7L1BN6E6327XTSA1 Features
RF Type LTE
1.5V~3.6V voltage
4.9mA current
BGA7L1BN6E6327XTSA1 Applications
There are a lot of Infineon Technologies
BGA7L1BN6E6327XTSA1 RF Amplifiers applications.
Personal Navigation Device (PND)
Cellular Phones with GPS
Notebook PC
Ultra-Mobile PC
Recreational
Marine Navigation
Avionics
GPS
GLONASS
BeiDou
BGA7L1BN6E6327XTSA1 More Descriptions
RF Low Noise Amp Single 716MHz to 960MHz 13.6dB 6-Pin TSNP-2 T/R
RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs
Rf Amplifier, 960Mhz, -40 To 85Deg C; Frequency Min:716Mhz; Frequency Max:960Mhz; Gain:13.6Db; Noise Figure Typ:0.75Db; Rf Ic Case Style:Tsnp; No. Of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Temperaturerohs Compliant: Yes |Infineon BGA7L1BN6E6327XTSA1
BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc. | Summary of Features: Insertion power gain: 13.6 dB; Low noise figure: 0.75 dB; Low current consumption: 4.9 mA; Insertion loss in bypass mode: -2.2 dB; Operating frequencies: 716 - 960 MHz; Two-state control: Bypass- and high gain-mode; Supply voltage: 1.5 V to 3.6 V; Digital on/off switch (1V logic high level); Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2); B7HF Silicon Germanium technology; RF output internally matched to 50 ; Only 1 external SMD component necessary; Pb-free (RoHS compliant) package | Target Applications: LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs
Rf Amplifier, 960Mhz, -40 To 85Deg C; Frequency Min:716Mhz; Frequency Max:960Mhz; Gain:13.6Db; Noise Figure Typ:0.75Db; Rf Ic Case Style:Tsnp; No. Of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Temperaturerohs Compliant: Yes |Infineon BGA7L1BN6E6327XTSA1
BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc. | Summary of Features: Insertion power gain: 13.6 dB; Low noise figure: 0.75 dB; Low current consumption: 4.9 mA; Insertion loss in bypass mode: -2.2 dB; Operating frequencies: 716 - 960 MHz; Two-state control: Bypass- and high gain-mode; Supply voltage: 1.5 V to 3.6 V; Digital on/off switch (1V logic high level); Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2); B7HF Silicon Germanium technology; RF output internally matched to 50 ; Only 1 external SMD component necessary; Pb-free (RoHS compliant) package | Target Applications: LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
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