BGA7L1BN6E6327XTSA1

Infineon Technologies BGA7L1BN6E6327XTSA1

Part Number:
BGA7L1BN6E6327XTSA1
Manufacturer:
Infineon Technologies
Ventron No:
7532971-BGA7L1BN6E6327XTSA1
Description:
13.6dB LTE Tape & Reel (TR) 716MHz~960MHz 1.5V~3.6V 1.8dB Surface Mount
ECAD Model:
Datasheet:
BGA7L1BN6E6327XTSA1

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Comments
Specifications
Infineon Technologies BGA7L1BN6E6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BGA7L1BN6E6327XTSA1.
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    6-XFDFN
  • Surface Mount
    YES
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • HTS Code
    8542.39.00.01
  • Voltage - Supply
    1.5V~3.6V
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Number of Functions
    1
  • Supply Voltage
    2.8V
  • Terminal Pitch
    0.4mm
  • Frequency
    716MHz~960MHz
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PBCC-N6
  • Operating Temperature (Max)
    85°C
  • Operating Temperature (Min)
    -40°C
  • Temperature Grade
    INDUSTRIAL
  • Test Frequency
    960MHz
  • Current - Supply
    4.9mA
  • Gain
    13.6dB
  • Telecom IC Type
    RF AND BASEBAND CIRCUIT
  • RF Type
    LTE
  • Noise Figure
    1.8dB
  • Length
    1.1mm
  • Height Seated (Max)
    0.4mm
  • Width
    0.7mm
  • RoHS Status
    ROHS3 Compliant
Description
BGA7L1BN6E6327XTSA1 Overview
RF Type LTE from the RF amplifier.The RF Amp' packaging Tape & Reel (TR) provides high reliability.The RF power Amplifier is convenient for international shipping since it is packaged in 6-XFDFN.mount Amplifiers RFing in Surface Mount is recommended.It is capable of supplying a voltage of 1.5V~3.6V volts.A total of 1 functions are present in the RF Amplifier.During operation, it uses a RF Amplifiers' current of 4.9mA as its supply RF Amplifiers' current.A variety of terminations with 6.

BGA7L1BN6E6327XTSA1 Features
RF Type LTE
1.5V~3.6V voltage
4.9mA current


BGA7L1BN6E6327XTSA1 Applications
There are a lot of Infineon Technologies
BGA7L1BN6E6327XTSA1 RF Amplifiers applications.


Personal Navigation Device (PND)
Cellular Phones with GPS
Notebook PC
Ultra-Mobile PC
Recreational
Marine Navigation
Avionics
GPS
GLONASS
BeiDou
BGA7L1BN6E6327XTSA1 More Descriptions
RF Low Noise Amp Single 716MHz to 960MHz 13.6dB 6-Pin TSNP-2 T/R
RF SILICON MMIC Low Noise Amplifier (LNA) > LTE / 3G LNAs
Rf Amplifier, 960Mhz, -40 To 85Deg C; Frequency Min:716Mhz; Frequency Max:960Mhz; Gain:13.6Db; Noise Figure Typ:0.75Db; Rf Ic Case Style:Tsnp; No. Of Pins:6Pins; Supply Voltage Min:1.5V; Supply Voltage Max:3.6V; Operating Temperaturerohs Compliant: Yes |Infineon BGA7L1BN6E6327XTSA1
BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc. | Summary of Features: Insertion power gain: 13.6 dB; Low noise figure: 0.75 dB; Low current consumption: 4.9 mA; Insertion loss in bypass mode: -2.2 dB; Operating frequencies: 716 - 960 MHz; Two-state control: Bypass- and high gain-mode; Supply voltage: 1.5 V to 3.6 V; Digital on/off switch (1V logic high level); Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2); B7HF Silicon Germanium technology; RF output internally matched to 50 ; Only 1 external SMD component necessary; Pb-free (RoHS compliant) package | Target Applications: LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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