Infineon Technologies BGA735N16E6327XTSA1

RF Amp Chip Triple General Purpose Amplifier 2.62GHz 3V 16-Pin TSNP EP T/R
The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700MHz) low noise amplifier MMIC for worldwide use, TSNP-16-1, RoHSInfineon SCT
The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineons proprietary and cost-effective SiGe:C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network. | Summary of Features: Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands); Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode(800 MHz / 1900 MHz / 2100 MHz); Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands); Standby mode (< 2 A typ.); Output internally matched to 50 ; Inputs pre-matched to 50 ; 2kV HBM ESD protection; Low external component count; Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm); Pb-free (RoHS compliant) package | Target Applications: LNA for LTE and 3G systems