UES1103SM

Microsemi Corporation UES1103SM

Part Number:
UES1103SM
Manufacturer:
Microsemi Corporation
Ventron No:
3063560-UES1103SM
Description:
DIODE GEN PURP 150V 2.5A A-MELF
ECAD Model:
Datasheet:
UES1103SM

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Specifications
Microsemi Corporation UES1103SM technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation UES1103SM.
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SQ-MELF, A
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    1996
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN LEAD
  • HTS Code
    8541.10.00.80
  • Terminal Position
    END
  • Terminal Form
    WRAP AROUND
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    2μA @ 150V
  • Voltage - Forward (Vf) (Max) @ If
    975mV @ 2A
  • Case Connection
    ISOLATED
  • Forward Current
    2.5A
  • Operating Temperature - Junction
    175°C Max
  • Application
    ULTRA FAST RECOVERY
  • Forward Voltage
    975mV
  • Max Reverse Voltage (DC)
    150V
  • Average Rectified Current
    2.5A
  • Number of Phases
    1
  • Reverse Recovery Time
    25 ns
  • Peak Reverse Current
    2μA
  • Max Repetitive Reverse Voltage (Vrrm)
    150V
  • Peak Non-Repetitive Surge Current
    35A
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
UES1103SM Overview
There is an average rectified current of 2.5A volts for this device.The allowable value of forward current reaches 2.5A.In the datasheets, the peak reverse is 2μA, as indicated by the data chart.

UES1103SM Features
an average rectified current of 2.5A volts
the peak reverse is 2μA


UES1103SM Applications
There are a lot of Microsemi Corporation
UES1103SM applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
UES1103SM More Descriptions
Rectifier Diode Switching 150V 2.5A 25ns 2-Pin A-MELF
UES1103SM Series 2.5 A 150 V 25 ns SMT Ultrafast Power Rectifier - MELF
Compliant Surface Mount Bulk MELF 2 2.5 A 975 mV
DIODE GEN PURP 150V 2.5A A-MELF
Product Comparison
The three parts on the right have similar specifications to UES1103SM.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Diode Element Material
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    HTS Code
    Terminal Position
    Terminal Form
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Application
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Reverse Recovery Time
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Radiation Hardening
    RoHS Status
    Lifecycle Status
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Output Current
    Lead Free
    Capacitance @ Vr, F
    Output Current-Max
    View Compare
  • UES1103SM
    UES1103SM
    8 Weeks
    Surface Mount
    Surface Mount
    SQ-MELF, A
    2
    SILICON
    Bulk
    1996
    e0
    no
    Active
    Not Applicable
    2
    EAR99
    TIN LEAD
    8541.10.00.80
    END
    WRAP AROUND
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    2μA @ 150V
    975mV @ 2A
    ISOLATED
    2.5A
    175°C Max
    ULTRA FAST RECOVERY
    975mV
    150V
    2.5A
    1
    25 ns
    2μA
    150V
    35A
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • UES1302
    8 Weeks
    Through Hole
    Through Hole
    Axial
    2
    SILICON
    Bulk
    1996
    e0
    no
    Active
    Not Applicable
    2
    -
    Tin/Lead (Sn/Pb)
    8541.10.00.80
    -
    WIRE
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 100V
    925mV @ 6A
    ISOLATED
    6A
    -55°C~175°C
    EFFICIENCY
    925mV
    100V
    6A
    1
    30 ns
    5μA
    100V
    125A
    No
    RoHS Compliant
    IN PRODUCTION (Last Updated: 1 month ago)
    175°C
    -55°C
    100V
    6A
    6A
    Lead Free
    -
    -
  • UES1102SM
    8 Weeks
    Surface Mount
    Surface Mount
    SQ-MELF, A
    2
    SILICON
    Bulk
    1997
    e0
    no
    Active
    Not Applicable
    2
    EAR99
    TIN LEAD
    8541.10.00.80
    END
    WRAP AROUND
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    2μA @ 100V
    -
    ISOLATED
    2.5A
    150°C Max
    ULTRA FAST RECOVERY
    975mV
    100V
    2.5A
    1
    25 ns
    2μA
    100V
    35A
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    3.5pF @ 6V 1MHz
    -
  • UES1106
    8 Weeks
    Through Hole
    Through Hole
    A, Axial
    2
    SILICON
    Bulk
    1996
    e0
    no
    Active
    Not Applicable
    2
    -
    Tin/Lead (Sn/Pb)
    8541.10.00.80
    -
    WIRE
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    10μA @ 400V
    1.25V @ 1A
    ISOLATED
    1A
    -55°C~150°C
    EFFICIENCY
    1.25V
    400V
    1A
    1
    50 ns
    10μA
    400V
    20A
    No
    Non-RoHS Compliant
    -
    150°C
    -55°C
    -
    -
    -
    Contains Lead
    -
    2A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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