Texas Instruments UCC27624QDRQ1
- Part Number:
- UCC27624QDRQ1
- Manufacturer:
- Texas Instruments
- Ventron No:
- 6401401-UCC27624QDRQ1
- Description:
- Automotive 5-A/5-A dual-channel gate driver with 4-V UVLO, 30-V VDD and low prop delay
- Datasheet:
- ucc27624-q1
- Number of channels2
- Power switchGaNFET
- Peak output current (A)5
- Input VCC (min) (V)4.5
- Input VCC (max) (V)26
- FeaturesEnable pin
- Operating temperature range (°C)-40 to 150
- Fall time (ns)10
- Propagation delay time (μs)0.017
- Input thresholdCMOS
- Channel input logicDual
- Input negative voltage (V)-10
- RatingAutomotive
- Undervoltage lockout (typ) (V)4
- Driver configurationDual
The UCC27624-Q1 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624-Q1 has a typical peak drive strength of 5 A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The devices fast propagation delay (17-ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.
UCC27624-Q1 can handle –10 V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The devices transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.
The UCC27624-Q1 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.
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